Stimulated emission of near-infrared radiation in silicon fin light-emitting diode
Stimulated emission of near-infrared radiation in silicon fin light-emitting diode
We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si3N4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.
1104-1106
Saito, S.
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Takahama, T.
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Tani, K.
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Takahashi, M.
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Mine, T.
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Suwa, Y.
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Hisamoto, D.
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28 June 2011
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Takahama, T.
c14e65fd-f06c-460e-8696-bf5d9e8a27c3
Tani, K.
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Takahashi, M.
dc03c7a7-3139-4483-9624-6fa38b9d94a2
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Suwa, Y.
fc26f520-628d-49e2-b8ee-15ee9a1c9271
Hisamoto, D.
2be2e1fe-9975-4f24-a6ab-be930aa67a7b
Saito, S., Takahama, T. and Tani, K. et al.
(2011)
Stimulated emission of near-infrared radiation in silicon fin light-emitting diode.
Applied Physics Letters, 98 (26), .
(doi:10.1063/1.3605255).
Abstract
We propose top-down processes to make silicon multiple quantum wells called fins for a light-emitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si3N4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.
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APL2011.pdf
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Published date: 28 June 2011
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 353145
URI: http://eprints.soton.ac.uk/id/eprint/353145
ISSN: 0003-6951
PURE UUID: af70dbdf-9993-4f7f-b565-a50b16bb4e2f
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Date deposited: 30 May 2013 15:37
Last modified: 15 Mar 2024 03:43
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Author:
S. Saito
Author:
T. Takahama
Author:
K. Tani
Author:
M. Takahashi
Author:
T. Mine
Author:
Y. Suwa
Author:
D. Hisamoto
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