Germanium fin light-emitting diode
Germanium fin light-emitting diode
We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping.
condensation, current density, electroluminescence, electron-hole recombination, elemental semiconductors, germanium, integrated optoelectronics, internal stresses, light emitting diodes, monolithic integrated circuits, oxidation, population inversion, thermal expansion
241105-[3pp]
Saito, Shinichi
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Oda, K.
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Takahama, T.
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Tani, K.
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Mine, T.
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13 December 2011
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Oda, K.
20c31a56-7578-4bbd-b704-253026ed38db
Takahama, T.
c14e65fd-f06c-460e-8696-bf5d9e8a27c3
Tani, K.
19bd8ed9-71c3-472c-9d5c-0c7e11b7f2c5
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Saito, Shinichi, Oda, K. and Takahama, T. et al.
(2011)
Germanium fin light-emitting diode.
Applied Physics Letters, 99 (24), .
(doi:10.1063/1.3670053).
Abstract
We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping.
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APL2011b.pdf
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More information
Published date: 13 December 2011
Keywords:
condensation, current density, electroluminescence, electron-hole recombination, elemental semiconductors, germanium, integrated optoelectronics, internal stresses, light emitting diodes, monolithic integrated circuits, oxidation, population inversion, thermal expansion
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 353146
URI: http://eprints.soton.ac.uk/id/eprint/353146
ISSN: 0003-6951
PURE UUID: a9ece4d7-9e80-459a-a468-ff0615730e49
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Date deposited: 03 Jun 2013 09:33
Last modified: 15 Mar 2024 03:43
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Contributors
Author:
Shinichi Saito
Author:
K. Oda
Author:
T. Takahama
Author:
K. Tani
Author:
T. Mine
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