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Germanium fin light-emitting diode

Germanium fin light-emitting diode
Germanium fin light-emitting diode
We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping.
condensation, current density, electroluminescence, electron-hole recombination, elemental semiconductors, germanium, integrated optoelectronics, internal stresses, light emitting diodes, monolithic integrated circuits, oxidation, population inversion, thermal expansion
0003-6951
241105-[3pp]
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Oda, K.
20c31a56-7578-4bbd-b704-253026ed38db
Takahama, T.
c14e65fd-f06c-460e-8696-bf5d9e8a27c3
Tani, K.
19bd8ed9-71c3-472c-9d5c-0c7e11b7f2c5
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Oda, K.
20c31a56-7578-4bbd-b704-253026ed38db
Takahama, T.
c14e65fd-f06c-460e-8696-bf5d9e8a27c3
Tani, K.
19bd8ed9-71c3-472c-9d5c-0c7e11b7f2c5
Mine, T.
edf24fad-1af6-4006-97da-1018309cd5e7

Saito, Shinichi, Oda, K. and Takahama, T. et al. (2011) Germanium fin light-emitting diode. Applied Physics Letters, 99 (24), 241105-[3pp]. (doi:10.1063/1.3670053).

Record type: Article

Abstract

We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping.

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More information

Published date: 13 December 2011
Keywords: condensation, current density, electroluminescence, electron-hole recombination, elemental semiconductors, germanium, integrated optoelectronics, internal stresses, light emitting diodes, monolithic integrated circuits, oxidation, population inversion, thermal expansion
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 353146
URI: https://eprints.soton.ac.uk/id/eprint/353146
ISSN: 0003-6951
PURE UUID: a9ece4d7-9e80-459a-a468-ff0615730e49
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 03 Jun 2013 09:33
Last modified: 22 Oct 2019 00:37

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