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Novel metal gates for high ? applications

Novel metal gates for high ? applications
Novel metal gates for high ? applications
The development of gate systems suitable for high ? dielectrics is critical to the advancement of complementary metal-oxide-semiconductor (CMOS) devices. Both the effective work function and material stability are key parameters to these systems. A systematic study of metal gates of the composition HfxSi1-x (0.25 ? x ? 1) is demonstrated here, including XPS, XRD and four point probe measurements. The effective work function of each material is evaluated and it is shown that it can be tuned from 4.5 to less than 4.0?eV. Suitable work functions for n-channel metal-oxide-semiconductor applications (4.05?±?0.2?eV) were achieved using hafnium rich compositions; however, XPS and diffraction measurements confirmed that these materials demonstrated a high propensity to oxidise, causing the reduction of the underlying oxides, making them unsuitable for commercial application.
0021-8979
34107
Chang, Mei
c4da8136-3238-442d-a1ea-24717e50c49e
Chen, Michael S.
39d998f7-9eca-46f0-b560-1bda40b78e1c
David, Anaïs
632d5394-88ef-4a11-8bb8-5c4bb2884a12
Gandikota, Srinivas
0e6ab644-b7a3-46d1-bd2c-6feeab3e239e
Ganguli, Seshadri
800e7eac-87e8-437d-bafd-bcf59fc15ae6
Hayden, Brian E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Hung, Steven
7b001f0b-9f9b-4638-adc0-aa66df178d99
Lu, Xinliang
a5d1e6dc-2b71-417d-bd05-78770a747047
Mormiche, Claire
00a2dfb0-7160-453a-9eb1-02808eb60cb4
Noori, Atif
3887c4a3-1357-4cd5-83d5-2c786d47cfe1
Smith, Duncan C.A.
b96cf343-537e-4e4b-a60f-e90e9c460606
Vian, Chris J.B.
c5ca4c67-5a34-475e-b99b-04593f9c6cc9
Chang, Mei
c4da8136-3238-442d-a1ea-24717e50c49e
Chen, Michael S.
39d998f7-9eca-46f0-b560-1bda40b78e1c
David, Anaïs
632d5394-88ef-4a11-8bb8-5c4bb2884a12
Gandikota, Srinivas
0e6ab644-b7a3-46d1-bd2c-6feeab3e239e
Ganguli, Seshadri
800e7eac-87e8-437d-bafd-bcf59fc15ae6
Hayden, Brian E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Hung, Steven
7b001f0b-9f9b-4638-adc0-aa66df178d99
Lu, Xinliang
a5d1e6dc-2b71-417d-bd05-78770a747047
Mormiche, Claire
00a2dfb0-7160-453a-9eb1-02808eb60cb4
Noori, Atif
3887c4a3-1357-4cd5-83d5-2c786d47cfe1
Smith, Duncan C.A.
b96cf343-537e-4e4b-a60f-e90e9c460606
Vian, Chris J.B.
c5ca4c67-5a34-475e-b99b-04593f9c6cc9

Chang, Mei, Chen, Michael S., David, Anaïs, Gandikota, Srinivas, Ganguli, Seshadri, Hayden, Brian E., Hung, Steven, Lu, Xinliang, Mormiche, Claire, Noori, Atif, Smith, Duncan C.A. and Vian, Chris J.B. (2013) Novel metal gates for high ? applications. Journal of Applied Physics, 113 (3), 34107. (doi:10.1063/1.4780447).

Record type: Article

Abstract

The development of gate systems suitable for high ? dielectrics is critical to the advancement of complementary metal-oxide-semiconductor (CMOS) devices. Both the effective work function and material stability are key parameters to these systems. A systematic study of metal gates of the composition HfxSi1-x (0.25 ? x ? 1) is demonstrated here, including XPS, XRD and four point probe measurements. The effective work function of each material is evaluated and it is shown that it can be tuned from 4.5 to less than 4.0?eV. Suitable work functions for n-channel metal-oxide-semiconductor applications (4.05?±?0.2?eV) were achieved using hafnium rich compositions; however, XPS and diffraction measurements confirmed that these materials demonstrated a high propensity to oxidise, causing the reduction of the underlying oxides, making them unsuitable for commercial application.

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More information

Published date: 18 January 2013
Organisations: Electrochemistry

Identifiers

Local EPrints ID: 353155
URI: https://eprints.soton.ac.uk/id/eprint/353155
ISSN: 0021-8979
PURE UUID: 07f2d323-5860-485f-893a-f613308f6c32
ORCID for Brian E. Hayden: ORCID iD orcid.org/0000-0002-7762-1812

Catalogue record

Date deposited: 03 Jun 2013 11:13
Last modified: 20 Jul 2019 01:27

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Contributors

Author: Mei Chang
Author: Michael S. Chen
Author: Anaïs David
Author: Srinivas Gandikota
Author: Seshadri Ganguli
Author: Brian E. Hayden ORCID iD
Author: Steven Hung
Author: Xinliang Lu
Author: Claire Mormiche
Author: Atif Noori
Author: Duncan C.A. Smith
Author: Chris J.B. Vian

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