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Stress in electroplated gold on silicon substrates and its dependence on cathode agitation

Stress in electroplated gold on silicon substrates and its dependence on cathode agitation
Stress in electroplated gold on silicon substrates and its dependence on cathode agitation
The influence of cathode agitation on the residual stress of electroplated gold has been investigated. Using a custom-built plating cell, a periodic, reciprocating motion was applied to silicon substrates that were electroplated with soft gold. A commercially available gold sulfite solution was used to deposit the 0.6 μm thick gold films using a current density of 3.0 mA/cm2 and a bath temperature of 50 °C. By increasing the speed of cathode agitation from 0 to 5 cm/s, the magnitude of the compressive stress decreased from -64 to -9 MPa. The results suggest that cathode agitation significantly alters the mass transport within the electrolytic cell and can be used as a method of stress control in gold electroplating. This finding is potentially significant for plating applications in microelectronics and microsystems that require precise stress control.
gold electroplating, cathode agitation, residual stress
0167-9317
21-26
Pu, Suan-Hui
8b46b970-56fd-4a4e-8688-28668f648f43
Holmes, Andrew S.
be2dbd21-2b84-4fa6-b743-e3c23f9a6bdb
Yeatman, Eric M.
cfcf6b8a-a153-41a6-bdf4-dc5e5ff70b3b
Pu, Suan-Hui
8b46b970-56fd-4a4e-8688-28668f648f43
Holmes, Andrew S.
be2dbd21-2b84-4fa6-b743-e3c23f9a6bdb
Yeatman, Eric M.
cfcf6b8a-a153-41a6-bdf4-dc5e5ff70b3b

Pu, Suan-Hui, Holmes, Andrew S. and Yeatman, Eric M. (2013) Stress in electroplated gold on silicon substrates and its dependence on cathode agitation. Microelectronic Engineering, 112, 21-26. (doi:10.1016/j.mee.2013.05.019).

Record type: Article

Abstract

The influence of cathode agitation on the residual stress of electroplated gold has been investigated. Using a custom-built plating cell, a periodic, reciprocating motion was applied to silicon substrates that were electroplated with soft gold. A commercially available gold sulfite solution was used to deposit the 0.6 μm thick gold films using a current density of 3.0 mA/cm2 and a bath temperature of 50 °C. By increasing the speed of cathode agitation from 0 to 5 cm/s, the magnitude of the compressive stress decreased from -64 to -9 MPa. The results suggest that cathode agitation significantly alters the mass transport within the electrolytic cell and can be used as a method of stress control in gold electroplating. This finding is potentially significant for plating applications in microelectronics and microsystems that require precise stress control.

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e-pub ahead of print date: June 2013
Published date: December 2013
Keywords: gold electroplating, cathode agitation, residual stress
Organisations: Electronics & Computer Science, Engineering Science Unit

Identifiers

Local EPrints ID: 353908
URI: http://eprints.soton.ac.uk/id/eprint/353908
ISSN: 0167-9317
PURE UUID: 8b244135-d89b-46ac-8d4e-f8d006ec84ab
ORCID for Suan-Hui Pu: ORCID iD orcid.org/0000-0002-3335-8880

Catalogue record

Date deposited: 24 Jun 2013 14:59
Last modified: 15 Mar 2024 04:02

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Contributors

Author: Suan-Hui Pu ORCID iD
Author: Andrew S. Holmes
Author: Eric M. Yeatman

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