The University of Southampton
University of Southampton Institutional Repository

Stress in electroplated gold on silicon substrates and its dependence on cathode agitation

Stress in electroplated gold on silicon substrates and its dependence on cathode agitation
Stress in electroplated gold on silicon substrates and its dependence on cathode agitation
The influence of cathode agitation on the residual stress of electroplated gold has been investigated. Using a custom-built plating cell, a periodic, reciprocating motion was applied to silicon substrates that were electroplated with soft gold. A commercially available gold sulfite solution was used to deposit the 0.6 μm thick gold films using a current density of 3.0 mA/cm2 and a bath temperature of 50 °C. By increasing the speed of cathode agitation from 0 to 5 cm/s, the magnitude of the compressive stress decreased from -64 to -9 MPa. The results suggest that cathode agitation significantly alters the mass transport within the electrolytic cell and can be used as a method of stress control in gold electroplating. This finding is potentially significant for plating applications in microelectronics and microsystems that require precise stress control.
gold electroplating, cathode agitation, residual stress
0167-9317
21-26
Pu, Suan-Hui
8b46b970-56fd-4a4e-8688-28668f648f43
Holmes, Andrew S.
be2dbd21-2b84-4fa6-b743-e3c23f9a6bdb
Yeatman, Eric M.
cfcf6b8a-a153-41a6-bdf4-dc5e5ff70b3b
Pu, Suan-Hui
8b46b970-56fd-4a4e-8688-28668f648f43
Holmes, Andrew S.
be2dbd21-2b84-4fa6-b743-e3c23f9a6bdb
Yeatman, Eric M.
cfcf6b8a-a153-41a6-bdf4-dc5e5ff70b3b

Pu, Suan-Hui, Holmes, Andrew S. and Yeatman, Eric M. (2013) Stress in electroplated gold on silicon substrates and its dependence on cathode agitation. Microelectronic Engineering, 112, 21-26. (doi:10.1016/j.mee.2013.05.019).

Record type: Article

Abstract

The influence of cathode agitation on the residual stress of electroplated gold has been investigated. Using a custom-built plating cell, a periodic, reciprocating motion was applied to silicon substrates that were electroplated with soft gold. A commercially available gold sulfite solution was used to deposit the 0.6 μm thick gold films using a current density of 3.0 mA/cm2 and a bath temperature of 50 °C. By increasing the speed of cathode agitation from 0 to 5 cm/s, the magnitude of the compressive stress decreased from -64 to -9 MPa. The results suggest that cathode agitation significantly alters the mass transport within the electrolytic cell and can be used as a method of stress control in gold electroplating. This finding is potentially significant for plating applications in microelectronics and microsystems that require precise stress control.

Text
1-s2.0-S0167931713005078-main - Version of Record
Available under License Creative Commons Attribution.
Download (1MB)

More information

e-pub ahead of print date: June 2013
Published date: December 2013
Keywords: gold electroplating, cathode agitation, residual stress
Organisations: Electronics & Computer Science, Engineering Science Unit

Identifiers

Local EPrints ID: 353908
URI: http://eprints.soton.ac.uk/id/eprint/353908
ISSN: 0167-9317
PURE UUID: 8b244135-d89b-46ac-8d4e-f8d006ec84ab
ORCID for Suan-Hui Pu: ORCID iD orcid.org/0000-0002-3335-8880

Catalogue record

Date deposited: 24 Jun 2013 14:59
Last modified: 07 Oct 2020 02:21

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×