New generation of resistance thermometers based on Ge films on GaAs substrates


Boltovets, N.S., Dugaev, V.K, Kholevchuk, V.V, McDonald, P.C, Mitin, V.F, Nemish, I.Yu, Pavese, F, Sorokin, P.V., Soloviev, E.A and Venger, E.F (2003) New generation of resistance thermometers based on Ge films on GaAs substrates In, Mitin, V.F and McDonald, P.C (eds.) Temperature: its Measurement and Control in Science and Industry. Eighth International Temperature Symposium American Institute of Physics pp. 399-404. (AIP Conference Proceedings 684, 7).

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Description/Abstract

Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program.

Item Type: Book Section
ISBNs: 0735401535 (print)
Venue - Dates: Eighth International Temperature Symposium, 2002-10-21 - 2002-10-24
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Keywords: thermometry, low temperatures
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ePrint ID: 35491
Date :
Date Event
October 2003Published
Date Deposited: 17 May 2006
Last Modified: 16 Apr 2017 22:09
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/35491

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