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New generation of resistance thermometers based on Ge films on GaAs substrates

Boltovets, N.S., Dugaev, V.K, Kholevchuk, V.V, McDonald, P.C, Mitin, V.F, Nemish, I.Yu, Pavese, F, Sorokin, P.V., Soloviev, E.A and Venger, E.F (2003) New generation of resistance thermometers based on Ge films on GaAs substrates In, Mitin, V.F and McDonald, P.C (eds.) Temperature: its Measurement and Control in Science and Industry. Eighth International Temperature Symposium American Institute of Physics pp. 399-404. (AIP Conference Proceedings 684, 7).

Record type: Book Section


Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program.

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Published date: October 2003
Venue - Dates: Eighth International Temperature Symposium, 2002-10-21 - 2002-10-24
Keywords: thermometry, low temperatures


Local EPrints ID: 35491
ISBN: 0735401535
PURE UUID: 04a1e47f-51dc-4775-90ef-608072b3f1a0

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Date deposited: 17 May 2006
Last modified: 17 Jul 2017 15:47

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Author: N.S. Boltovets
Author: V.K Dugaev
Author: V.V Kholevchuk
Author: P.C McDonald
Author: V.F Mitin
Author: I.Yu Nemish
Author: F Pavese
Author: P.V. Sorokin
Author: E.A Soloviev
Author: E.F Venger
Editor: V.F Mitin
Editor: P.C McDonald

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