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Structural characterization of 3C-SiC grown using methytrichlorosilane

Structural characterization of 3C-SiC grown using methytrichlorosilane
Structural characterization of 3C-SiC grown using methytrichlorosilane
3C-SiC layers were grown on Si substrates using standard precursors (SiH4 and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.
defects, methyl trichloro silane, polycrystal, silicon carbide (SiC), stress
291-294
Bosi, Matteo
13854e98-1af2-4d93-9065-d9f87049a4a5
Attolini, Giovanni
410b131d-f500-471a-8f6c-2e35d8ebb547
Pécz, Béla
18454e94-b376-4e3f-a256-c1eecbfeed92
Zolnai, Zsolt
61a5e800-22d7-4896-a862-810519f26f50
Dobos, László
fb7d953b-84ec-4e97-bc1c-6361e32d490c
Martínez, Oscar
3ab054ea-4d0a-4aa8-bf8b-7c8d35444fb7
Jiang, Liu Di
374f2414-51f0-418f-a316-e7db0d6dc4d1
Taysir, Salim
22b81422-37be-46c7-b416-296331d890c5
Bosi, Matteo
13854e98-1af2-4d93-9065-d9f87049a4a5
Attolini, Giovanni
410b131d-f500-471a-8f6c-2e35d8ebb547
Pécz, Béla
18454e94-b376-4e3f-a256-c1eecbfeed92
Zolnai, Zsolt
61a5e800-22d7-4896-a862-810519f26f50
Dobos, László
fb7d953b-84ec-4e97-bc1c-6361e32d490c
Martínez, Oscar
3ab054ea-4d0a-4aa8-bf8b-7c8d35444fb7
Jiang, Liu Di
374f2414-51f0-418f-a316-e7db0d6dc4d1
Taysir, Salim
22b81422-37be-46c7-b416-296331d890c5

Bosi, Matteo, Attolini, Giovanni, Pécz, Béla, Zolnai, Zsolt, Dobos, László, Martínez, Oscar, Jiang, Liu Di and Taysir, Salim (2013) Structural characterization of 3C-SiC grown using methytrichlorosilane. The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Russian Federation. 02 - 06 Sep 2012. pp. 291-294 . (doi:10.4028/www.scientific.net/MSF.740-742.291).

Record type: Conference or Workshop Item (Paper)

Abstract

3C-SiC layers were grown on Si substrates using standard precursors (SiH4 and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.

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More information

Published date: 4 September 2013
Venue - Dates: The 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Russian Federation, 2012-09-02 - 2012-09-06
Keywords: defects, methyl trichloro silane, polycrystal, silicon carbide (SiC), stress
Organisations: Engineering Science Unit

Identifiers

Local EPrints ID: 355287
URI: https://eprints.soton.ac.uk/id/eprint/355287
PURE UUID: ddfc4c1a-e29a-4d0e-870e-71e819f77026
ORCID for Liu Di Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 21 Aug 2013 15:35
Last modified: 20 Jul 2019 00:55

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Contributors

Author: Matteo Bosi
Author: Giovanni Attolini
Author: Béla Pécz
Author: Zsolt Zolnai
Author: László Dobos
Author: Oscar Martínez
Author: Liu Di Jiang ORCID iD
Author: Salim Taysir

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