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New temperature and magnetic field sensors for cryogenic applications developed under a European Project

Mitin, V.F., McDonald, P.C., Pavese, F., Boltovets, N.S., Kholevchuk, V.V., Nemish, I.Yu., Basanets, V.V., Dugaev, V.K., Sorokin, P.V., Venger, E.F. and Mitin, E.V., (2005) New temperature and magnetic field sensors for cryogenic applications developed under a European Project Zhang, L., Lin, L. and Chen, G. (eds.) In Proceedings of the Twentieth International Cryogenic Engineering Conference (ICEC20). Elsevier..

Record type: Conference or Workshop Item (Paper)

Abstract

Progress is reviewed, in the development of various semiconductor sensors for measurement of temperature and magnetic field that are intended for use in cryogenic engineering and low-temperature physics and have been developed in an international collaboration supported by the European Union. A range of resistance thermometers based on both bulk and film Ge and SiC has been developed, to provide high sensitivity over complementary temperature ranges, within the overall range 0,03 to 500 K. New types of Si and GaAs diode temperature sensor have also been produced. A novel multisensor for concurrent measurements of temperature and magnetic fields has been designed, which consists of a Ge-film resistance thermometer and a InSb-film Hall generator.

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More information

Published date: 2005
Venue - Dates: Twentieth International Cryogenic Engineering Conference, 2004-01-01 - 2004-01-01
Keywords: thermometers, magnetic field sensors, low temperatures

Identifiers

Local EPrints ID: 35544
URI: http://eprints.soton.ac.uk/id/eprint/35544
ISBN: 0080445594
PURE UUID: 61e45856-34e3-403d-8da2-64bad84e8c39

Catalogue record

Date deposited: 18 May 2006
Last modified: 17 Jul 2017 15:47

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Contributors

Author: V.F. Mitin
Author: P.C. McDonald
Author: F. Pavese
Author: N.S. Boltovets
Author: V.V. Kholevchuk
Author: I.Yu. Nemish
Author: V.V. Basanets
Author: V.K. Dugaev
Author: P.V. Sorokin
Author: E.F. Venger
Author: E.V. Mitin
Editor: L. Zhang
Editor: L. Lin
Editor: G. Chen

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