Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths
Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths
We present a method for detecting light in the 1550nm wavelength window based on a silicon nitride waveguide that is vertically coupled to a silicon photonic crystal cavity. The absorption in silicon arises from deep-levels created by ion implantation, thereby providing excellent CMOS compatibility. We demonstrate a responsivity of 0.108 A/W at -10V reverse bias with a dark current of 9.4nA. Our work demonstrates one of the smallest wavelength selective photodectors realised to date. By cascading such detectors we also demonstrate a two-channel demultiplexer.
CMOS integrated circuits, deep levels, dielectric waveguides, integrated optoelectronics, ion implantation, light absorption, optical waveguides, photodetectors, photodiodes, photonic crystals, silicon compounds
171106
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Krauss, Thomas F.
eb9a979b-8e52-4b83-b92b-7a0fbbc1ca58
O'Faolain, Liam
b9696b63-9c51-4745-83c5-131d48e782e8
30 April 2013
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Krauss, Thomas F.
eb9a979b-8e52-4b83-b92b-7a0fbbc1ca58
O'Faolain, Liam
b9696b63-9c51-4745-83c5-131d48e782e8
Debnath, Kapil, Gardes, Frederic Y., Knights, Andrew P., Reed, Graham T., Krauss, Thomas F. and O'Faolain, Liam
(2013)
Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths.
Applied Physics Letters, 102 (17), .
(doi:10.1063/1.4803541).
Abstract
We present a method for detecting light in the 1550nm wavelength window based on a silicon nitride waveguide that is vertically coupled to a silicon photonic crystal cavity. The absorption in silicon arises from deep-levels created by ion implantation, thereby providing excellent CMOS compatibility. We demonstrate a responsivity of 0.108 A/W at -10V reverse bias with a dark current of 9.4nA. Our work demonstrates one of the smallest wavelength selective photodectors realised to date. By cascading such detectors we also demonstrate a two-channel demultiplexer.
This record has no associated files available for download.
More information
Published date: 30 April 2013
Keywords:
CMOS integrated circuits, deep levels, dielectric waveguides, integrated optoelectronics, ion implantation, light absorption, optical waveguides, photodetectors, photodiodes, photonic crystals, silicon compounds
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 355721
URI: http://eprints.soton.ac.uk/id/eprint/355721
ISSN: 0003-6951
PURE UUID: fc4d20c5-64a5-418f-9331-85e0b2ab34dc
Catalogue record
Date deposited: 04 Sep 2013 09:55
Last modified: 15 Mar 2024 03:40
Export record
Altmetrics
Contributors
Author:
Kapil Debnath
Author:
Andrew P. Knights
Author:
Thomas F. Krauss
Author:
Liam O'Faolain
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
