The University of Southampton
University of Southampton Institutional Repository

Optical properties of silicon nanocrystals in silica: Results from spectral filtering effect, m-line technique, and x-ray photoelectron spectroscopy

Optical properties of silicon nanocrystals in silica: Results from spectral filtering effect, m-line technique, and x-ray photoelectron spectroscopy
Optical properties of silicon nanocrystals in silica: Results from spectral filtering effect, m-line technique, and x-ray photoelectron spectroscopy
The optical properties of silica layers containing silicon nanocrystals are analyzed in terms of spectral filtering in absorbing planar waveguides (cutoff spectra), m-line measurements, and x-ray photoelectron spectroscopy (XPS). The effects of optical dispersion, approximation of weak guiding, and depth dependence of refractive index in a planar waveguide are studied. We compare the measured optical properties of silicon-rich silicon oxide samples with the values estimated by the Bruggeman theory using the XPS structural components. A good agreement between the measured and calculated refractive indices is found. The results for absorption suggest high transparency of the nanoscale-suboxide component in contrast to the corresponding bulk material. The Raman intensity of silicon nanocrystals is proportional to the XPS amount of bulk silicon. The extinction coefficient extracted for the Si component is between the values for crystalline and amorphous silicon. Annealing at higher temperatures decreases the Si component extinction coefficient, which is interpreted as a decrease in the amorphous Si fraction. The XPS method surprisingly suggests a large proportion of silicon suboxide even after annealing at 1200 °C.
0021-8979
Khriachtchev, Leonid
59baead2-8c08-41b2-906b-cdf4cd4d3b04
Nikitin, Timur
9e038492-ed93-4238-9933-44049042803d
Oton, Claudio J.
4a0d4431-ec5c-4ab5-ab41-34c9db3615cf
Velagapudi, Rama
b9bb142b-d264-41fe-87d1-46e7302ae8cb
Sainio, Jani
91109167-917e-4b06-bc53-8e14c8ff7ea3
Lahtinen, Jouko
655db03a-1e46-412f-a8bf-c33a04d01325
Novikov, Sergei
e87d9320-fbaf-4f9e-ab63-9047530270d8
Khriachtchev, Leonid
59baead2-8c08-41b2-906b-cdf4cd4d3b04
Nikitin, Timur
9e038492-ed93-4238-9933-44049042803d
Oton, Claudio J.
4a0d4431-ec5c-4ab5-ab41-34c9db3615cf
Velagapudi, Rama
b9bb142b-d264-41fe-87d1-46e7302ae8cb
Sainio, Jani
91109167-917e-4b06-bc53-8e14c8ff7ea3
Lahtinen, Jouko
655db03a-1e46-412f-a8bf-c33a04d01325
Novikov, Sergei
e87d9320-fbaf-4f9e-ab63-9047530270d8

Khriachtchev, Leonid, Nikitin, Timur, Oton, Claudio J., Velagapudi, Rama, Sainio, Jani, Lahtinen, Jouko and Novikov, Sergei (2008) Optical properties of silicon nanocrystals in silica: Results from spectral filtering effect, m-line technique, and x-ray photoelectron spectroscopy. Journal of Applied Physics, 104 (10), [104316]. (doi:10.1063/1.3010304).

Record type: Article

Abstract

The optical properties of silica layers containing silicon nanocrystals are analyzed in terms of spectral filtering in absorbing planar waveguides (cutoff spectra), m-line measurements, and x-ray photoelectron spectroscopy (XPS). The effects of optical dispersion, approximation of weak guiding, and depth dependence of refractive index in a planar waveguide are studied. We compare the measured optical properties of silicon-rich silicon oxide samples with the values estimated by the Bruggeman theory using the XPS structural components. A good agreement between the measured and calculated refractive indices is found. The results for absorption suggest high transparency of the nanoscale-suboxide component in contrast to the corresponding bulk material. The Raman intensity of silicon nanocrystals is proportional to the XPS amount of bulk silicon. The extinction coefficient extracted for the Si component is between the values for crystalline and amorphous silicon. Annealing at higher temperatures decreases the Si component extinction coefficient, which is interpreted as a decrease in the amorphous Si fraction. The XPS method surprisingly suggests a large proportion of silicon suboxide even after annealing at 1200 °C.

This record has no associated files available for download.

More information

Accepted/In Press date: September 2008
Published date: 21 November 2008
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 356098
URI: http://eprints.soton.ac.uk/id/eprint/356098
ISSN: 0021-8979
PURE UUID: dd70a460-ad13-4d1c-bf16-16a4894831d2

Catalogue record

Date deposited: 10 Sep 2013 15:15
Last modified: 08 Jan 2022 15:06

Export record

Altmetrics

Contributors

Author: Leonid Khriachtchev
Author: Timur Nikitin
Author: Claudio J. Oton
Author: Rama Velagapudi
Author: Jani Sainio
Author: Jouko Lahtinen
Author: Sergei Novikov

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×