Self-aligned silicon ring resonator optical modulator with focused ion beam error correction
Self-aligned silicon ring resonator optical modulator with focused ion beam error correction
Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.
445-449
Thomson, David
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Gardes, F.Y.
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Cox, D.C.
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Fedeli, J-M.
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Mashanovich, G.Z.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
2013
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Cox, D.C.
f39204e1-afd3-4777-b85c-a35820d094cc
Fedeli, J-M.
19c1ac66-4239-45f3-879b-c06653685550
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, David, Gardes, F.Y., Cox, D.C., Fedeli, J-M., Mashanovich, G.Z. and Reed, G.T.
(2013)
Self-aligned silicon ring resonator optical modulator with focused ion beam error correction.
Journal of the Optical Society of America B, 30 (2), .
(doi:10.1364/JOSAB.30.000445).
Abstract
Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.
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Published date: 2013
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 356339
URI: http://eprints.soton.ac.uk/id/eprint/356339
ISSN: 0740-3224
PURE UUID: 254fa04a-7fd7-40c0-a64f-127591989756
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Date deposited: 16 Sep 2013 09:32
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
David Thomson
Author:
F.Y. Gardes
Author:
D.C. Cox
Author:
J-M. Fedeli
Author:
G.Z. Mashanovich
Author:
G.T. Reed
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