Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films

Wehrspohn, Ralf, Emelyanov, Andrey V., Khenkin, Mark V., Kazanskii, Andrey G., Forsh, Pavel A., Kashkarov, Pavel K., Lyubin, Evgeny V., Khomich, Andrey A., Gecevičius, Mindaugas, Beresna, Martynas, Kazansky, Peter G. and Gombert, Andreas (2012) Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films. Photonics for Solar Energy Systems IV (2012), Brussels, Belgium. 16 - 18 Apr 2012. p.84381I . (doi:10.1117/12.922896).

Abstract

This paper studies the effect of femtosecond laser treatment in air of hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility of laser-induced crystallization of a-Si:H films with controlled crystalline volume fraction was shown. A sufficient increase of dark conductivity was observed for laser treated a-Si:H films which crystallinity exceeds 7%. Such increase was attributed to change in conductivity mechanism. However, spectral dependences of absorption coefficient did not show any qualitative changes with the laser fluence increase. It was found that spallation and oxidation of the film took place when laser fluence became reasonably high.

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