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Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films

Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films
Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films
This paper studies the effect of femtosecond laser treatment in air of hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility of laser-induced crystallization of a-Si:H films with controlled crystalline volume fraction was shown. A sufficient increase of dark conductivity was observed for laser treated a-Si:H films which crystallinity exceeds 7%. Such increase was attributed to change in conductivity mechanism. However, spectral dependences of absorption coefficient did not show any qualitative changes with the laser fluence increase. It was found that spallation and oxidation of the film took place when laser fluence became reasonably high.
p.84381I
Wehrspohn, Ralf
6ea25dd8-1256-452f-9045-60136d33ea7a
Emelyanov, Andrey V.
865c7992-f16b-4817-a4e3-ff95b31239b7
Khenkin, Mark V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Kazanskii, Andrey G.
14a5eeab-a889-4cb6-8f66-e22967512252
Forsh, Pavel A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Kashkarov, Pavel K.
14a22d9e-6d96-4386-a5c0-4f43adf76b1f
Lyubin, Evgeny V.
c06ecd68-c9cf-495a-9077-dee723b03aaf
Khomich, Andrey A.
4ad5018f-fa77-40c1-8b61-a39c14c1e6f3
Gecevičius, Mindaugas
271576ee-dd9d-40b3-ab2f-19686b91dc64
Beresna, Martynas
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, Peter G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Gombert, Andreas
54845848-c3af-4395-876e-e74f6abb1b1f
Wehrspohn, Ralf
6ea25dd8-1256-452f-9045-60136d33ea7a
Emelyanov, Andrey V.
865c7992-f16b-4817-a4e3-ff95b31239b7
Khenkin, Mark V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Kazanskii, Andrey G.
14a5eeab-a889-4cb6-8f66-e22967512252
Forsh, Pavel A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Kashkarov, Pavel K.
14a22d9e-6d96-4386-a5c0-4f43adf76b1f
Lyubin, Evgeny V.
c06ecd68-c9cf-495a-9077-dee723b03aaf
Khomich, Andrey A.
4ad5018f-fa77-40c1-8b61-a39c14c1e6f3
Gecevičius, Mindaugas
271576ee-dd9d-40b3-ab2f-19686b91dc64
Beresna, Martynas
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, Peter G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Gombert, Andreas
54845848-c3af-4395-876e-e74f6abb1b1f

Wehrspohn, Ralf, Emelyanov, Andrey V., Khenkin, Mark V., Kazanskii, Andrey G., Forsh, Pavel A., Kashkarov, Pavel K., Lyubin, Evgeny V., Khomich, Andrey A., Gecevičius, Mindaugas, Beresna, Martynas, Kazansky, Peter G. and Gombert, Andreas (2012) Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films. Photonics for Solar Energy Systems IV (2012). 16 - 18 Apr 2012. p.84381I . (doi:10.1117/12.922896).

Record type: Conference or Workshop Item (Paper)

Abstract

This paper studies the effect of femtosecond laser treatment in air of hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility of laser-induced crystallization of a-Si:H films with controlled crystalline volume fraction was shown. A sufficient increase of dark conductivity was observed for laser treated a-Si:H films which crystallinity exceeds 7%. Such increase was attributed to change in conductivity mechanism. However, spectral dependences of absorption coefficient did not show any qualitative changes with the laser fluence increase. It was found that spallation and oxidation of the film took place when laser fluence became reasonably high.

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Published date: 2012
Venue - Dates: Photonics for Solar Energy Systems IV (2012), 2012-04-16 - 2012-04-18
Organisations: Optoelectronics Research Centre

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Local EPrints ID: 356460
URI: http://eprints.soton.ac.uk/id/eprint/356460
PURE UUID: 3a556e94-bf98-4740-926c-0ce982eb70d5

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Date deposited: 16 Sep 2013 11:14
Last modified: 25 Jul 2019 16:31

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Contributors

Author: Ralf Wehrspohn
Author: Andrey V. Emelyanov
Author: Mark V. Khenkin
Author: Andrey G. Kazanskii
Author: Pavel A. Forsh
Author: Pavel K. Kashkarov
Author: Evgeny V. Lyubin
Author: Andrey A. Khomich
Author: Mindaugas Gecevičius
Author: Andreas Gombert

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