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Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties

Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties
Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties
We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ~ 15 mm2 in size. A morphological study showed that it was possible to preserve the polycrystalline structure of the transferred ~ 1 µm thick films. The films' Seebeck coefficients after LIFT transfer were measured and resulted in -49 ± 1 µV/K, -93 ± 8 µV/K and 142 ± 3 µV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3 respectively, which was found to be ~23 ± 6% lower compared to their initial value. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ~ 15 mm2 with minimal damage onto a non-standard polymer-coated substrate.
0947-8396
1073-1079
Feinäugle, M.
3b15dc5b-ff52-4232-9632-b1be238a750c
Sones, C.L.
9de9d8ee-d394-46a5-80b7-e341c0eed0a8
Koukharenko, E.
b34ae878-2776-4088-8880-5b2bd4f33ec3
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Feinäugle, M.
3b15dc5b-ff52-4232-9632-b1be238a750c
Sones, C.L.
9de9d8ee-d394-46a5-80b7-e341c0eed0a8
Koukharenko, E.
b34ae878-2776-4088-8880-5b2bd4f33ec3
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020

Feinäugle, M., Sones, C.L., Koukharenko, E., Gholipour, B., Hewak, D.W. and Eason, R.W. (2013) Laser-induced forward transfer of intact chalcogenide thin films: resultant morphology and thermoelectric properties. Applied Physics A: Materials Science & Processing, 112 (4), 1073-1079. (doi:10.1007/s00339-012-7491-4).

Record type: Article

Abstract

We present a laser-based transfer method for the novel application of fabricating elements for planar thermoelectric devices. Thin films of thermoelectric chalcogenides (Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3) were printed via laser-induced forward transfer (LIFT) onto polymer-coated substrates over large areas of up to ~ 15 mm2 in size. A morphological study showed that it was possible to preserve the polycrystalline structure of the transferred ~ 1 µm thick films. The films' Seebeck coefficients after LIFT transfer were measured and resulted in -49 ± 1 µV/K, -93 ± 8 µV/K and 142 ± 3 µV/K for Bi2Te3, Bi2Se3 and Bi0.5Sb1.5Te3 respectively, which was found to be ~23 ± 6% lower compared to their initial value. This demonstration shows that LIFT is suitable to transfer sensitive, functional semiconductor materials over areas up to ~ 15 mm2 with minimal damage onto a non-standard polymer-coated substrate.

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More information

Accepted/In Press date: 3 December 2012
Published date: 2013
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 356461
URI: http://eprints.soton.ac.uk/id/eprint/356461
ISSN: 0947-8396
PURE UUID: c230cf4c-a784-43dd-be92-5a7c24f33fa1
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

Catalogue record

Date deposited: 12 Sep 2013 16:52
Last modified: 12 Nov 2019 02:04

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Contributors

Author: M. Feinäugle
Author: C.L. Sones
Author: E. Koukharenko
Author: B. Gholipour
Author: D.W. Hewak ORCID iD
Author: R.W. Eason ORCID iD

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