Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer
Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer
Total internal reflection optical switches structures are well known. However, previously reported switches based upon carrier injection have suffered from the diffusion of carriers within the guiding layer leading to inefficient reflection. While some attempts have been made to restrict the diffusion of carriers in devices fabricated in materials other than silicon, carrier diffusion has still been possible. In this paper, we propose the use of a thin SiO2 barrier around the carrier injection region to improve the performance of the device. Modeling data has shown that high-performance switching is possible by confining the carriers in this way. Modeling suggests that switching times of the order of 5 ns can be achieved with a switching current of the order of 30 mA.
1288-1294
Thomson, David
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Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
13 June 2008
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Knights, Andrew P.
5a042eab-1929-49f2-a243-897d3aad063b
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, David, Gardes, Frederic Y., Mashanovich, Goran Z., Knights, Andrew P. and Reed, Graham T.
(2008)
Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer.
Journal of Lightwave Technology, 26 (10), .
(doi:10.1109/JLT.2008.917083).
Abstract
Total internal reflection optical switches structures are well known. However, previously reported switches based upon carrier injection have suffered from the diffusion of carriers within the guiding layer leading to inefficient reflection. While some attempts have been made to restrict the diffusion of carriers in devices fabricated in materials other than silicon, carrier diffusion has still been possible. In this paper, we propose the use of a thin SiO2 barrier around the carrier injection region to improve the performance of the device. Modeling data has shown that high-performance switching is possible by confining the carriers in this way. Modeling suggests that switching times of the order of 5 ns can be achieved with a switching current of the order of 30 mA.
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Published date: 13 June 2008
Organisations:
Optoelectronics Research Centre, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 356479
URI: http://eprints.soton.ac.uk/id/eprint/356479
ISSN: 0733-8724
PURE UUID: 4d5d8f68-fca0-4f87-a25a-ec2bfca28c06
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Date deposited: 16 Sep 2013 13:54
Last modified: 15 Mar 2024 03:40
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Author:
Andrew P. Knights
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