Optical filters utilizing ion implanted Bragg gratings in SOI waveguides
Optical filters utilizing ion implanted Bragg gratings in SOI waveguides
The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI) has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that relatively short grating lengths, on the order of a thousand microns, can exhibit sufficient wavelength suppression, of >10 dB, using the implantation technique. Fabricated planar implanted slab-guided SOI waveguides demonstrated an extinction of -10 dB for TE modes and -6 dB for TM modes for the case of oxygen implantation. Extinctions of -5dB and -2 dB have been demonstrated with silicon implantation.
1-6
Bulk, M.P.
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Knights, A.P.
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Jessop, P.E.
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Waugh, P.
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Loiacono, R.
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Mashanovich, G.Z.
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Reed, G.T.
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Gwilliam, R.M.
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2008
Bulk, M.P.
32b10d7e-e8ae-4876-9a40-588ce984fe0f
Knights, A.P.
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Jessop, P.E.
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Waugh, P.
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Loiacono, R.
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Mashanovich, G.Z.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Gwilliam, R.M.
e856c9bd-c0f3-4ac4-adbe-4835e9c9923e
Bulk, M.P., Knights, A.P., Jessop, P.E., Waugh, P., Loiacono, R., Mashanovich, G.Z., Reed, G.T. and Gwilliam, R.M.
(2008)
Optical filters utilizing ion implanted Bragg gratings in SOI waveguides.
Advances in Optical Technologies, 2008, , [276165].
(doi:10.1155/2008/276165).
Abstract
The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-on-insulator (SOI) has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that relatively short grating lengths, on the order of a thousand microns, can exhibit sufficient wavelength suppression, of >10 dB, using the implantation technique. Fabricated planar implanted slab-guided SOI waveguides demonstrated an extinction of -10 dB for TE modes and -6 dB for TM modes for the case of oxygen implantation. Extinctions of -5dB and -2 dB have been demonstrated with silicon implantation.
Text
276165
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Published date: 2008
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 356483
URI: http://eprints.soton.ac.uk/id/eprint/356483
ISSN: 1687-6393
PURE UUID: a8a4e28f-102c-4c66-bb81-c140c8273af8
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Date deposited: 16 Sep 2013 11:56
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
M.P. Bulk
Author:
A.P. Knights
Author:
P.E. Jessop
Author:
P. Waugh
Author:
R. Loiacono
Author:
G.Z. Mashanovich
Author:
G.T. Reed
Author:
R.M. Gwilliam
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