Three-dimensional control of optical waveguide fabrication in silicon
Three-dimensional control of optical waveguide fabrication in silicon
In this paper, we report a direct-write technique for three dimensional control of waveguide fabrication in silicon. Here, a focused beam of 250 keV protons is used to selectively slow down the rate of porous silicon formation during subsequent anodization, producing a silicon core surrounded by porous silicon cladding. The etch rate is found to depend on the irradiated dose, increasing the size of the core from 2.5 µm to 3.5 µm in width, and from 1.5 µm to 2.6 µm in height by increasing the dose by an order of magnitude. This ability to accurately control the waveguide profile with the ion dose at high spatial resolution provides a means of producing three-dimensional silicon waveguide tapers. Propagation losses of 6.7 dB/cm for TE and 6.8 dB/cm for TM polarization were measured in linear waveguides at the wavelength of 1550 nm.
573-578
Teo, Ee J.
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Bettiol, Andrew A.
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Breese, Mark B.
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Yang, Pengyuan
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Mashanovich, Goran Z.
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Headley, William R.
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Reed, Graham T.
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Blackwood, Daniel J.
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21 January 2008
Teo, Ee J.
28e9c459-5f68-48a1-92ed-f4c525407291
Bettiol, Andrew A.
ebeefad1-b7f1-4f93-ba09-e9b1a52536fb
Breese, Mark B.
7addc94f-0424-43c4-be99-317ff887a83c
Yang, Pengyuan
aab36b0c-8636-4d8c-b306-c9aae2e034ef
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Headley, William R.
233d5522-ec8e-48ce-b6d2-8565d2c9e304
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Blackwood, Daniel J.
3a890de4-2756-4582-886c-dd036e948ef7
Teo, Ee J., Bettiol, Andrew A., Breese, Mark B., Yang, Pengyuan, Mashanovich, Goran Z., Headley, William R., Reed, Graham T. and Blackwood, Daniel J.
(2008)
Three-dimensional control of optical waveguide fabrication in silicon.
Optics Express, 16 (2), .
(doi:10.1364/OE.16.000573).
Abstract
In this paper, we report a direct-write technique for three dimensional control of waveguide fabrication in silicon. Here, a focused beam of 250 keV protons is used to selectively slow down the rate of porous silicon formation during subsequent anodization, producing a silicon core surrounded by porous silicon cladding. The etch rate is found to depend on the irradiated dose, increasing the size of the core from 2.5 µm to 3.5 µm in width, and from 1.5 µm to 2.6 µm in height by increasing the dose by an order of magnitude. This ability to accurately control the waveguide profile with the ion dose at high spatial resolution provides a means of producing three-dimensional silicon waveguide tapers. Propagation losses of 6.7 dB/cm for TE and 6.8 dB/cm for TM polarization were measured in linear waveguides at the wavelength of 1550 nm.
Text
oe-16-2-573
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Published date: 21 January 2008
Organisations:
Optoelectronics Research Centre, Photonic Systems Circuits & Sensors
Identifiers
Local EPrints ID: 356484
URI: http://eprints.soton.ac.uk/id/eprint/356484
ISSN: 1094-4087
PURE UUID: e9b213c8-cdcb-45cb-af65-4f0984615371
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Date deposited: 16 Sep 2013 13:56
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
Ee J. Teo
Author:
Andrew A. Bettiol
Author:
Mark B. Breese
Author:
Pengyuan Yang
Author:
Goran Z. Mashanovich
Author:
William R. Headley
Author:
Graham T. Reed
Author:
Daniel J. Blackwood
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