Micrometer size polarisation independent depletion-type photonic modulator in silicon on insulator
Micrometer size polarisation independent depletion-type photonic modulator in silicon on insulator
The trend in silicon photonics, in the last few years has been to reduce waveguide size to obtain maximum gain in the real estate of devices as well as to increase the performance of active devices. Using different methods for the modulation, optical modulators in silicon have seen their bandwidth increased to reach multi GHz frequencies. In order to simplify fabrication, one requirement for a waveguide, as well as for a modulator, is to retain polarisation independence in any state of operation and to be as small as possible. In this paper we provide a way to obtain polarisation independence and improve the efficiency of an optical modulator using a V-shaped pn junction base on the natural etch angle of silicon, 54.7 deg. This modulator is compared to a flat junction depletion type modulator of the same size and doping concentration.
5879-5884
Gardes, F.Y.
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Tsakmakidis, K.L.
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Thomson, D.J.
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Reed, G.T.
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Mashanovich, G.Z.
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Hess, O.
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Avitabile, D.
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30 April 2007
Gardes, F.Y.
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Tsakmakidis, K.L.
f221b002-cc6f-43b2-bd97-22fa6d1bbbe5
Thomson, D.J.
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Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Hess, O.
f6e15076-66b2-40de-a7e5-6299b6b95255
Avitabile, D.
30191ad7-ab07-4119-b16b-16f3b442e3c0
Gardes, F.Y., Tsakmakidis, K.L., Thomson, D.J., Reed, G.T., Mashanovich, G.Z., Hess, O. and Avitabile, D.
(2007)
Micrometer size polarisation independent depletion-type photonic modulator in silicon on insulator.
Optics Express, 15 (9), .
(doi:10.1364/OE.15.005879).
Abstract
The trend in silicon photonics, in the last few years has been to reduce waveguide size to obtain maximum gain in the real estate of devices as well as to increase the performance of active devices. Using different methods for the modulation, optical modulators in silicon have seen their bandwidth increased to reach multi GHz frequencies. In order to simplify fabrication, one requirement for a waveguide, as well as for a modulator, is to retain polarisation independence in any state of operation and to be as small as possible. In this paper we provide a way to obtain polarisation independence and improve the efficiency of an optical modulator using a V-shaped pn junction base on the natural etch angle of silicon, 54.7 deg. This modulator is compared to a flat junction depletion type modulator of the same size and doping concentration.
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oe-15-9-5879
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Published date: 30 April 2007
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
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Local EPrints ID: 356500
URI: http://eprints.soton.ac.uk/id/eprint/356500
ISSN: 1094-4087
PURE UUID: 223fd120-ea6c-49c3-81d9-d31e815772ea
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Date deposited: 21 Oct 2013 12:22
Last modified: 29 Oct 2024 02:45
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Author:
F.Y. Gardes
Author:
K.L. Tsakmakidis
Author:
D.J. Thomson
Author:
G.T. Reed
Author:
G.Z. Mashanovich
Author:
O. Hess
Author:
D. Avitabile
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