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Freestanding waveguides in silicon

Freestanding waveguides in silicon
Freestanding waveguides in silicon
Using a direct-write process for the production of three dimensional microstructures on a semiconductor, freestanding waveguides have been realized in silicon. The waveguides are produced by a focused beam of high energy protons that is scanned over a silicon substrate. The latent image of the scan is subsequently developed by electrochemical etching. Herein the authors report on the fabrication method as well as determining the propagation loss of these structures. Propagation loss values of 13.4 and 14.6 dB/cm were obtained for these preliminary structures for transverse electric and transverse magnetic polarizations, respectively.
0003-6951
Yang, P.Y.
c914e619-0d22-4761-8b50-05e60bfdfc3e
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Gomez-Morilla, I.
49aaf397-e8dd-4b15-a773-e8c1ae46bf79
Headley, W.R.
5a80c998-1fc3-4ad0-a82a-3870250efbd8
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Teo, E.J.
4a4ebf02-61df-4c49-98ac-a2236e622b6f
Blackwood, D.J.
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Breese, M.B.H.
6ddfddc2-98b2-4408-a3e2-e39586d50548
Bettiol, A.A.
9e83d3b0-73b9-4ec9-ac19-b0c217017c02
Yang, P.Y.
c914e619-0d22-4761-8b50-05e60bfdfc3e
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Gomez-Morilla, I.
49aaf397-e8dd-4b15-a773-e8c1ae46bf79
Headley, W.R.
5a80c998-1fc3-4ad0-a82a-3870250efbd8
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Teo, E.J.
4a4ebf02-61df-4c49-98ac-a2236e622b6f
Blackwood, D.J.
8364cc86-ece8-439e-b831-b542e8b4e2d9
Breese, M.B.H.
6ddfddc2-98b2-4408-a3e2-e39586d50548
Bettiol, A.A.
9e83d3b0-73b9-4ec9-ac19-b0c217017c02

Yang, P.Y., Mashanovich, G.Z., Gomez-Morilla, I., Headley, W.R., Reed, G.T., Teo, E.J., Blackwood, D.J., Breese, M.B.H. and Bettiol, A.A. (2007) Freestanding waveguides in silicon. Applied Physics Letters, 90 (24). (doi:10.1063/1.2749175).

Record type: Article

Abstract

Using a direct-write process for the production of three dimensional microstructures on a semiconductor, freestanding waveguides have been realized in silicon. The waveguides are produced by a focused beam of high energy protons that is scanned over a silicon substrate. The latent image of the scan is subsequently developed by electrochemical etching. Herein the authors report on the fabrication method as well as determining the propagation loss of these structures. Propagation loss values of 13.4 and 14.6 dB/cm were obtained for these preliminary structures for transverse electric and transverse magnetic polarizations, respectively.

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More information

Published date: 2007
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 356509
URI: https://eprints.soton.ac.uk/id/eprint/356509
ISSN: 0003-6951
PURE UUID: 6c7591bb-862b-4b3b-8d98-cbdb69bc32c9

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Date deposited: 21 Oct 2013 12:32
Last modified: 18 Oct 2018 16:32

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Contributors

Author: P.Y. Yang
Author: I. Gomez-Morilla
Author: W.R. Headley
Author: G.T. Reed
Author: E.J. Teo
Author: D.J. Blackwood
Author: M.B.H. Breese
Author: A.A. Bettiol

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