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Issues associated with polarization independence in silicon photonics

Issues associated with polarization independence in silicon photonics
Issues associated with polarization independence in silicon photonics
Interest in silicon photonics is experiencing a dramatic increase due to emerging applications areas and several high profile successes in device and technology development. Despite early work dating back to the mid-1980s, dramatic progress has been made only in the recent years. While many approaches to research have been developed, the striking difference between the work of the early to mid-1990s, and more recent work, is that the latter has been associated with a trend to reduce the cross sectional dimensions of the waveguides that form the devices. The question arises therefore, as to whether one should move to very small strip waveguides (silicon wires) of the order of 250 nm in height and a few hundred nanometres in width for improved device performance but with little hope of polarization independence, or to utilize slightly larger rib waveguides that offer more opportunity to control the polarization dependence of the devices. In this paper, we discuss the devices suitable for one approach or the other, and present the designs associated both with strip and rib waveguides. In particular, we present the designs of polarization-independent ring resonators with free spectral ranges up to 12 nm, we propose modulators for bandwidths in the tens of gigahertz regime, and present grating-based couplers for rib and strip waveguides, and/or for wafer scale testing, as well as a novel means of developing Bragg gratings via ion implantation.
1077-260X
1335-1344
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Headley, William R.
233d5522-ec8e-48ce-b6d2-8565d2c9e304
Timotijevic, Branislav
593ef77f-2dfb-4dd1-bc24-c4c3b6b075f3
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Chan, Seong Phun
2576564e-424a-497c-bd6d-69109b333901
Waugh, Peter
6deafdcd-891f-4950-85cc-d485882d576e
Emerson, Neil G.
dbfb7630-1867-4f52-9cc7-2cb6a37f49a7
Png, Ching Eng
e4625e26-2379-48ab-ad42-48336575dad3
Paniccia, Mario J.
54913982-f63b-471c-8994-a6caba56ba38
Liu, Ansheng
4b5b227b-6a07-4d5f-8fc2-a01bd9ccfc38
Hak, Dani
fff55dac-6cc3-41ec-a7ae-bd2f4f6c6cb9
Passaro, Vittorio M.N.
787696b6-5fbe-4ec7-9a7f-b76b132ac819
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Headley, William R.
233d5522-ec8e-48ce-b6d2-8565d2c9e304
Timotijevic, Branislav
593ef77f-2dfb-4dd1-bc24-c4c3b6b075f3
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Chan, Seong Phun
2576564e-424a-497c-bd6d-69109b333901
Waugh, Peter
6deafdcd-891f-4950-85cc-d485882d576e
Emerson, Neil G.
dbfb7630-1867-4f52-9cc7-2cb6a37f49a7
Png, Ching Eng
e4625e26-2379-48ab-ad42-48336575dad3
Paniccia, Mario J.
54913982-f63b-471c-8994-a6caba56ba38
Liu, Ansheng
4b5b227b-6a07-4d5f-8fc2-a01bd9ccfc38
Hak, Dani
fff55dac-6cc3-41ec-a7ae-bd2f4f6c6cb9
Passaro, Vittorio M.N.
787696b6-5fbe-4ec7-9a7f-b76b132ac819

Reed, Graham T., Mashanovich, Goran Z., Headley, William R., Timotijevic, Branislav, Gardes, Frederic Y., Chan, Seong Phun, Waugh, Peter, Emerson, Neil G., Png, Ching Eng, Paniccia, Mario J., Liu, Ansheng, Hak, Dani and Passaro, Vittorio M.N. (2006) Issues associated with polarization independence in silicon photonics. IEEE Journal of Selected Topics in Quantum Electronics, 12 (6), 1335-1344. (doi:10.1109/JSTQE.2006.883136).

Record type: Article

Abstract

Interest in silicon photonics is experiencing a dramatic increase due to emerging applications areas and several high profile successes in device and technology development. Despite early work dating back to the mid-1980s, dramatic progress has been made only in the recent years. While many approaches to research have been developed, the striking difference between the work of the early to mid-1990s, and more recent work, is that the latter has been associated with a trend to reduce the cross sectional dimensions of the waveguides that form the devices. The question arises therefore, as to whether one should move to very small strip waveguides (silicon wires) of the order of 250 nm in height and a few hundred nanometres in width for improved device performance but with little hope of polarization independence, or to utilize slightly larger rib waveguides that offer more opportunity to control the polarization dependence of the devices. In this paper, we discuss the devices suitable for one approach or the other, and present the designs associated both with strip and rib waveguides. In particular, we present the designs of polarization-independent ring resonators with free spectral ranges up to 12 nm, we propose modulators for bandwidths in the tens of gigahertz regime, and present grating-based couplers for rib and strip waveguides, and/or for wafer scale testing, as well as a novel means of developing Bragg gratings via ion implantation.

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More information

Published date: November 2006
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 356514
URI: https://eprints.soton.ac.uk/id/eprint/356514
ISSN: 1077-260X
PURE UUID: 3369ae26-0e31-4ee9-8a48-c0831104328b

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Date deposited: 23 Oct 2013 13:46
Last modified: 22 Oct 2018 16:33

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Contributors

Author: Graham T. Reed
Author: William R. Headley
Author: Branislav Timotijevic
Author: Seong Phun Chan
Author: Peter Waugh
Author: Neil G. Emerson
Author: Ching Eng Png
Author: Mario J. Paniccia
Author: Ansheng Liu
Author: Dani Hak
Author: Vittorio M.N. Passaro

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