Hot-wire polysilicon waveguides with low deposition temperature
Hot-wire polysilicon waveguides with low deposition temperature
We fabricated and measured the optical loss of polysilicon waveguides deposited using Hot-Wire Chemical Vapour Deposition (HWCVD) at a temperature of 240°C. A polysilicon film 220 nm thick was deposited on top of a 2000 nm thick PECVD silicon dioxide. The crystalline volume fraction of the polysilicon film was measured by Raman spectroscopy to be 91%. The optical propagation losses of 400, 500, and 600 nm waveguides were measured to be 16.9, 15.9, and 13.5 dB/cm, respectively, for transverse electric (TE) mode at the wavelength of 1550 nm. Scattering loss is expected to be the major contributor to the propagation loss.
4030-4032
Ben Masaud, Taha
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Tarazona, Antulio
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Jaberansary, Ehsan
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Chen, Xia
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Reed, Graham T.
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Mashanovich, Goran Z.
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Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
2013
Ben Masaud, Taha
931dee8c-d8ac-4519-96ff-fa0813b4da59
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Jaberansary, Ehsan
579c745a-aef8-484c-9190-93c808552723
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ben Masaud, Taha, Tarazona, Antulio, Jaberansary, Ehsan, Chen, Xia, Reed, Graham T., Mashanovich, Goran Z. and Chong, Harold M.H.
(2013)
Hot-wire polysilicon waveguides with low deposition temperature.
Optics Letters, 38 (20), .
(doi:10.1364/OL.38.004030).
Abstract
We fabricated and measured the optical loss of polysilicon waveguides deposited using Hot-Wire Chemical Vapour Deposition (HWCVD) at a temperature of 240°C. A polysilicon film 220 nm thick was deposited on top of a 2000 nm thick PECVD silicon dioxide. The crystalline volume fraction of the polysilicon film was measured by Raman spectroscopy to be 91%. The optical propagation losses of 400, 500, and 600 nm waveguides were measured to be 16.9, 15.9, and 13.5 dB/cm, respectively, for transverse electric (TE) mode at the wavelength of 1550 nm. Scattering loss is expected to be the major contributor to the propagation loss.
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ol-38-20-4030.pdf
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Published date: 2013
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 356964
URI: http://eprints.soton.ac.uk/id/eprint/356964
ISSN: 0146-9592
PURE UUID: 2000a513-4087-4f31-8bc6-b3c667b016bc
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Date deposited: 28 Sep 2013 17:43
Last modified: 20 Jul 2019 00:51
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Author:
Taha Ben Masaud
Author:
Ehsan Jaberansary
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