The near-diffraction-limited operation of positive index-guided submicrometer-ridge laser arrays

Lim, Ee-Leong, Teng, Jinghua, Seng, N.A.S., Dong, Jian-Rong, Chua, Soo-Jin, Shanmugasundaram, K. and Chen, Nanguang (2009) The near-diffraction-limited operation of positive index-guided submicrometer-ridge laser arrays. IEEE Journal of Quantum Electronics, 45 (8), 903-913. (doi:10.1109/JQE.2009.2016118).

Abstract

Strong optical and electrical interactions can occur between optoelectronic devices when the element-size and inter-element spacing are significantly reduced. In this paper, we study these interactions in the closely packed, positive index-guided submicrometer-ridge laser arrays, with element size of ~ 0.8 µm, operating at a wavelength of ~ 1.55 µm. From simulations, the structure is found to favor the in-phase lasing mode, which produces a single-main-lobe far-field profile. Next, this property is experimentally demonstrated in the fabricated device, which exhibits a near-diffraction-limited (beamwidth of 1.3 times diffraction-limit) single-main-lobe far-field operating at 2.6 times the threshold current.

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