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The near-diffraction-limited operation of positive index-guided submicrometer-ridge laser arrays

The near-diffraction-limited operation of positive index-guided submicrometer-ridge laser arrays
The near-diffraction-limited operation of positive index-guided submicrometer-ridge laser arrays
Strong optical and electrical interactions can occur between optoelectronic devices when the element-size and inter-element spacing are significantly reduced. In this paper, we study these interactions in the closely packed, positive index-guided submicrometer-ridge laser arrays, with element size of ~ 0.8 µm, operating at a wavelength of ~ 1.55 µm. From simulations, the structure is found to favor the in-phase lasing mode, which produces a single-main-lobe far-field profile. Next, this property is experimentally demonstrated in the fabricated device, which exhibits a near-diffraction-limited (beamwidth of 1.3 times diffraction-limit) single-main-lobe far-field operating at 2.6 times the threshold current.
0018-9197
903-913
Lim, Ee-Leong
55c097dc-30d4-49df-9995-894c87dc2560
Teng, Jinghua
f47107ab-c320-4326-a8fe-45d9113f257a
Seng, N.A.S.
511167f3-1877-4a7d-b312-9ac2cb12cea8
Dong, Jian-Rong
bbd3abfc-65cf-431e-9315-94bc15855d47
Chua, Soo-Jin
a7d5cd17-ee03-42c5-9469-c8d1a0d77874
Shanmugasundaram, K.
cf65e8b9-9cfe-4899-a9f7-d0eaa2913a9e
Chen, Nanguang
2a59bfd9-109b-49c4-a756-9c2bf0845221
Lim, Ee-Leong
55c097dc-30d4-49df-9995-894c87dc2560
Teng, Jinghua
f47107ab-c320-4326-a8fe-45d9113f257a
Seng, N.A.S.
511167f3-1877-4a7d-b312-9ac2cb12cea8
Dong, Jian-Rong
bbd3abfc-65cf-431e-9315-94bc15855d47
Chua, Soo-Jin
a7d5cd17-ee03-42c5-9469-c8d1a0d77874
Shanmugasundaram, K.
cf65e8b9-9cfe-4899-a9f7-d0eaa2913a9e
Chen, Nanguang
2a59bfd9-109b-49c4-a756-9c2bf0845221

Lim, Ee-Leong, Teng, Jinghua, Seng, N.A.S., Dong, Jian-Rong, Chua, Soo-Jin, Shanmugasundaram, K. and Chen, Nanguang (2009) The near-diffraction-limited operation of positive index-guided submicrometer-ridge laser arrays. IEEE Journal of Quantum Electronics, 45 (8), 903-913. (doi:10.1109/JQE.2009.2016118).

Record type: Article

Abstract

Strong optical and electrical interactions can occur between optoelectronic devices when the element-size and inter-element spacing are significantly reduced. In this paper, we study these interactions in the closely packed, positive index-guided submicrometer-ridge laser arrays, with element size of ~ 0.8 µm, operating at a wavelength of ~ 1.55 µm. From simulations, the structure is found to favor the in-phase lasing mode, which produces a single-main-lobe far-field profile. Next, this property is experimentally demonstrated in the fabricated device, which exhibits a near-diffraction-limited (beamwidth of 1.3 times diffraction-limit) single-main-lobe far-field operating at 2.6 times the threshold current.

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More information

Published date: 2009
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 357236
URI: http://eprints.soton.ac.uk/id/eprint/357236
ISSN: 0018-9197
PURE UUID: b43c5e21-a7ab-424b-b5f4-208651a0ec30

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Date deposited: 04 Oct 2013 13:50
Last modified: 09 Dec 2019 20:00

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