Temperature dependent lifetime of Dy³⁺: 1.3µm emission in Ge-As-S glass containing very small amount of Ga and CsBr

Choi, Yong Gyu, Curry, Richard J. and Hewak, Daniel W. (2012) Temperature dependent lifetime of Dy³⁺: 1.3µm emission in Ge-As-S glass containing very small amount of Ga and CsBr. Chemical Physics Letters, 551, 101-104. (doi:10.1016/j.cplett.2012.09.018).

Abstract

The lifetime of 1.3µm emission from Dy³⁺-doped Ge-As-S glass containing very small amount of Ga and CsBr reveals interesting temperature dependence; with the addition of Ga/CsBr up to ~0.2 mol% the lifetime decreases with increasing temperature. When the concentration of Ga/CsBr reaches ~0.3 mol%, however, the lifetime remains relatively constant regardless of temperature change. For further addition up to ~0.5 mol%, the lifetime increases as temperature rises. This uncommon behavior is explained through our understanding of the different temperature dependences of multiphonon relaxation and spontaneous emission rates associated with the thermally coupled Dy³⁺: (⁶H_9/2, ⁶F_11/2) manifolds in our modified chalcogenide glass.

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Contributors

Author: Daniel W. Hewak

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