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Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films

Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films
Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films
A systematic study of hydrogenated amorphous silicon nitride films deposited by varying gas flow rate ratio (R = SiH4/NH3) using Photo-Chemical Vapour Deposition reveal that as R is increased, dominant phase changes from silicon oxynitride to silicon nitride with embedded silicon nanoclusters. The change in photoluminescence spectral features in these films is attributed to quantum confinement effect. The results suggest that hydrogen plays a crucial role in overall phase evolution and in-situ formation of Si nanoclusters embedded in silicon nitride matrix.
silicon nitride, phase stabilization, silicon nanocrystals, photoluminescence
1359-6462
605-608
Singh, Sarab Preet
ae5314c0-06ee-42e0-9a45-4b3089a88a73
Srivastava, P.
f85726ca-471b-4248-b9db-08719fe813f2
Ghosh, S.
9fd40cd1-34b3-4ffe-adf4-44e39c2dd576
Khan, S.A.
764a6098-b84b-4adf-bac6-c401c5c7dda6
Oton, Claudio J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Prakash, G.Vijaya
8f38f2ed-0655-49e3-af62-667c1b8f9cfc
Singh, Sarab Preet
ae5314c0-06ee-42e0-9a45-4b3089a88a73
Srivastava, P.
f85726ca-471b-4248-b9db-08719fe813f2
Ghosh, S.
9fd40cd1-34b3-4ffe-adf4-44e39c2dd576
Khan, S.A.
764a6098-b84b-4adf-bac6-c401c5c7dda6
Oton, Claudio J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Prakash, G.Vijaya
8f38f2ed-0655-49e3-af62-667c1b8f9cfc

Singh, Sarab Preet, Srivastava, P., Ghosh, S., Khan, S.A., Oton, Claudio J. and Prakash, G.Vijaya (2010) Phase evolution and photoluminescence in as-deposited amorphous silicon nitride films. Scripta Materialia, 63 (6), 605-608. (doi:10.1016/j.scriptamat.2010.05.049).

Record type: Article

Abstract

A systematic study of hydrogenated amorphous silicon nitride films deposited by varying gas flow rate ratio (R = SiH4/NH3) using Photo-Chemical Vapour Deposition reveal that as R is increased, dominant phase changes from silicon oxynitride to silicon nitride with embedded silicon nanoclusters. The change in photoluminescence spectral features in these films is attributed to quantum confinement effect. The results suggest that hydrogen plays a crucial role in overall phase evolution and in-situ formation of Si nanoclusters embedded in silicon nitride matrix.

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More information

Published date: September 2010
Keywords: silicon nitride, phase stabilization, silicon nanocrystals, photoluminescence
Organisations: Optoelectronics Research Centre
Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 357342
URI: http://eprints.soton.ac.uk/id/eprint/357342
DOI: doi:10.1016/j.scriptamat.2010.05.049
ISSN: 1359-6462
PURE UUID: 95970503-049f-40ae-ada0-93ac95fd64ae

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Date deposited: 07 Oct 2013 12:42
Last modified: 14 Mar 2024 14:58

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Contributors

Author: Sarab Preet Singh
Author: P. Srivastava
Author: S. Ghosh
Author: S.A. Khan
Author: Claudio J. Oton
Author: G.Vijaya Prakash

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