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Single domain wall magnetoresistance electron-beam fabrication and magnetoresistance measurement

Single domain wall magnetoresistance electron-beam fabrication and magnetoresistance measurement
Single domain wall magnetoresistance electron-beam fabrication and magnetoresistance measurement
We report a reproducible top down fabrication procedure for a single domain wall magnetoresistance H-shaped device. A bi-layer e-beam lift-off process is used and the e-beam exposure dose sensing technique and proximity effect correction are discussed, together with a method to reduce the alignment tolerance to below 20 nanometer. The domain wall width is constrained down to 37nm and room temperature domain wall magnetoresistance ratio of 0.3% was detected. The dependence of switching magnetic field to domain width will be discussed, as well as the maximum domain width which can retain its magnetisation aligned along the long axis at zero field which is found to be 210nm in our experiment.
electron beams, fabrication, magnetism, nanotechnology
8100
81000P
The International Society for Optical Engineering
Wang, Y.
48958e9a-d1d2-45f5-93e7-5a35d0b1b40e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Claudio-González, D.
38d4464e-a81c-4c1a-8220-2b283933087c
Charlton, M.D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274
Wang, Y.
48958e9a-d1d2-45f5-93e7-5a35d0b1b40e
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Claudio-González, D.
38d4464e-a81c-4c1a-8220-2b283933087c
Charlton, M.D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274

Wang, Y., de Groot, C.H., Claudio-González, D. and Charlton, M.D.B. (2011) Single domain wall magnetoresistance electron-beam fabrication and magnetoresistance measurement. In, Spintronics IV. (Proceedings of SPIE, , (doi:10.1117/12.892299), 8100) Bellingham, US. The International Society for Optical Engineering, 81000P. (doi:10.1117/12.892299).

Record type: Book Section

Abstract

We report a reproducible top down fabrication procedure for a single domain wall magnetoresistance H-shaped device. A bi-layer e-beam lift-off process is used and the e-beam exposure dose sensing technique and proximity effect correction are discussed, together with a method to reduce the alignment tolerance to below 20 nanometer. The domain wall width is constrained down to 37nm and room temperature domain wall magnetoresistance ratio of 0.3% was detected. The dependence of switching magnetic field to domain width will be discussed, as well as the maximum domain width which can retain its magnetisation aligned along the long axis at zero field which is found to be 210nm in our experiment.

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More information

Published date: 2011
Keywords: electron beams, fabrication, magnetism, nanotechnology
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 358378
URI: https://eprints.soton.ac.uk/id/eprint/358378
PURE UUID: 33375f75-95d9-4a2b-8eec-b14943f9f1ba
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 04 Oct 2013 10:42
Last modified: 03 Dec 2019 01:52

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Contributors

Author: Y. Wang
Author: C.H. de Groot ORCID iD
Author: D. Claudio-González
Author: M.D.B. Charlton

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