Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

Li, F.M., Hsieh, G.-W., Dalal, Sharvari, Newton, M.C., Stott, J.E., Hiralal, P., Nathan, A., Warburton, P.A., Unalan, H.E., Beecher, P., Flewitt, A.J., Robinson, I., Amaratunga, G. and Milne, W.I. (2008) Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors. IEEE Transactions on Electron Devices, 55 (11), 3001-3011. (doi:10.1109/TED.2008.2005180).

Abstract

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2 V-1s-1, representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs

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Contributors

Author: M.C. Newton

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