A memristor SPICE model accounting for volatile characteristics of practical ReRAM
A memristor SPICE model accounting for volatile characteristics of practical ReRAM
Realizing large-scale circuits utilizing the recently discovered nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wealth of biasing conditions. Currently, all availing SPICE memristor models only account for non-volatile characteristics. However, recent works on practical ReRAM also demonstrate volatile effects and it is thus imperative to capture this behavior in the model framework. In this paper, we introduce a new memristor SPICE model that accounts for both non-volatile and volatile effects. The model is demonstrated via a number of simulation cases, benchmarked against measured results acquired by solid-state TiO2 ReRAM.
135-137
Berdan, R.
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Lim, C.
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Khiat, A.
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Papavassiliou, C.
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Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
December 2013
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Lim, C.
db6014d1-e677-4c9d-94af-cda466fe72ee
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Berdan, R., Lim, C., Khiat, A., Papavassiliou, C. and Prodromakis, T.
(2013)
A memristor SPICE model accounting for volatile characteristics of practical ReRAM.
IEEE Electron Device Letters, 35 (1), .
Abstract
Realizing large-scale circuits utilizing the recently discovered nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wealth of biasing conditions. Currently, all availing SPICE memristor models only account for non-volatile characteristics. However, recent works on practical ReRAM also demonstrate volatile effects and it is thus imperative to capture this behavior in the model framework. In this paper, we introduce a new memristor SPICE model that accounts for both non-volatile and volatile effects. The model is demonstrated via a number of simulation cases, benchmarked against measured results acquired by solid-state TiO2 ReRAM.
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Published date: December 2013
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 359332
URI: http://eprints.soton.ac.uk/id/eprint/359332
ISSN: 0741-3106
PURE UUID: c65fb647-6083-4901-8757-309095015f46
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Date deposited: 20 Nov 2013 13:32
Last modified: 14 Mar 2024 15:20
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Author:
R. Berdan
Author:
C. Lim
Author:
A. Khiat
Author:
C. Papavassiliou
Author:
T. Prodromakis
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