Spin-orbit splitting in single-layer MoS₂ revealed by triply resonant Raman scattering

Sun, Linfeng, Yan, Jiaxu, Zhan, Da, Liu, Lei, Hu, Hailong, Li, Hong, Tay, Ben Kang, Kuo, Jer-Lai, Huang, Chung-Che, Hewak, Daniel W., Lee, Pooi See and Shen, Ze Xiang (2013) Spin-orbit splitting in single-layer MoS₂ revealed by triply resonant Raman scattering. Physical Review Letters, 111 (12), [126801]. (doi:10.1103/PhysRevLett.111.126801).

Abstract

Although new spintronic devices based on the giant spin-orbit splitting of single-layer MoS₂ have been proposed, such splitting has not been studied effectively in experiments. This Letter reports the valence band spin-orbit splitting in single-layer MoS₂ for the first time, probed by the triply resonant Raman scattering process. We found that upon 325 nm laser irradiation, the second order overtone and combination Raman modes of single-layer MoS₂ are dramatically enhanced. Such resonant Raman enhancement arises from the electron-two-phonon triple resonance via the deformation potential and Fröhlich interaction. As a sensitive and precise probe for the spin-orbit splitting, the triply resonant Raman scattering will provide a new and independent route to study the spin characteristics of MoS₂.

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Contributors

Author: Chung-Che Huang

Author: Daniel W. Hewak

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