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Absorption enhancement using nanoneedle array for solar cell

Absorption enhancement using nanoneedle array for solar cell
Absorption enhancement using nanoneedle array for solar cell
A theoretical analysis of light trapping properties of Gallium arsenide (GaAs) nanoneedle arrays(NNAs) solar cells is presented. The effect of geometric parameters on the optical absorption of NNAs has been analyzed by using rigorous coupled wave analysis algorithm and finite element method. Compared with nanowire arrays and thin-film layer counterpart, higher light absorption efficiency can be achieved in GaAs NNAs, due to the graded refractive index of NNAs that incident light can be coupled into the NNAs efficiently. The absorption profiles at different wavelength and angle-dependant optical properties of NNAs are also evaluated. Meanwhile, the short-circuit current of GaAs NNAs for various lengths at fixed filling factor is obtained.
0003-6951
211110-[6pp]
Zhang, Xu
50925f96-e46c-475d-9059-07a0fb66702b
Sun, Xiao-hong
68775645-d9dc-4f72-a74d-866645064754
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhang, Xu
50925f96-e46c-475d-9059-07a0fb66702b
Sun, Xiao-hong
68775645-d9dc-4f72-a74d-866645064754
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1

Zhang, Xu, Sun, Xiao-hong and Jiang, Liudi (2013) Absorption enhancement using nanoneedle array for solar cell. Applied Physics Letters, 103, 211110-[6pp]. (doi:10.1063/1.4832216).

Record type: Article

Abstract

A theoretical analysis of light trapping properties of Gallium arsenide (GaAs) nanoneedle arrays(NNAs) solar cells is presented. The effect of geometric parameters on the optical absorption of NNAs has been analyzed by using rigorous coupled wave analysis algorithm and finite element method. Compared with nanowire arrays and thin-film layer counterpart, higher light absorption efficiency can be achieved in GaAs NNAs, due to the graded refractive index of NNAs that incident light can be coupled into the NNAs efficiently. The absorption profiles at different wavelength and angle-dependant optical properties of NNAs are also evaluated. Meanwhile, the short-circuit current of GaAs NNAs for various lengths at fixed filling factor is obtained.

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More information

Published date: 2013
Organisations: Engineering Science Unit

Identifiers

Local EPrints ID: 360057
URI: http://eprints.soton.ac.uk/id/eprint/360057
ISSN: 0003-6951
PURE UUID: fe147092-5fff-4362-9d48-336c23c89a99
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 25 Nov 2013 11:47
Last modified: 20 Jul 2019 00:55

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