Area selective growth of titanium diselenide thin films into micropatterned substrates by low-pressure chemical vapor deposition
Area selective growth of titanium diselenide thin films into micropatterned substrates by low-pressure chemical vapor deposition
The neutral, distorted octahedral complex [TiCl4(SenBu2)2] (1), prepared from the reaction of TiCl4 with the neutral SenBu2 in a 1:2 ratio and characterized by IR and multinuclear (1H, 13C{1H}, 77Se{1H}) NMR spectroscopy and microanalysis, serves as an efficient single-source precursor for low-pressure chemical vapor deposition (LPCVD) of titanium diselenide, TiSe2, films onto SiO2 and TiN substrates. X-ray diffraction patterns on the deposited films are consistent with single-phase, hexagonal 1T-TiSe2 (P3m1), with evidence of some preferred orientation of the crystallites in thicker films. The composition and structural morphology was confirmed by scanning electron microscopy (SEM), energy dispersive X-ray, and Raman spectroscopy. SEM imaging shows hexagonal plate crystallites growing perpendicular to the substrate, but these tend to align parallel to the surface when the quantity of reagent is reduced. The resistivity of the crystalline TiSe2 films is 3.36 ± 0.05 × 10-3 Ω·cm with a carrier density of 1× 1022 cm-3. Very highly selective film growth from the reagent was observed onto photolithographically patterned substrates, with film growth strongly preferred onto the conducting TiN surfaces of SiO2/TiN patterned substrates. TiSe2 is selectively deposited within the smallest 2 µm diameter TiN holes of the patterned TiN/SiO2 substrates. The variation in crystallite size with different diameter holes is determined by microfocus X-ray diffraction and SEM, revealing that the dimensions increase with the hole size, but that the thickness of the crystals stops increasing above ~20 µm hole size, whereas their lengths/widths continue to increase.
4719-4724
Benjamin, Sophie
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de Groot, C.H.
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Gurnani, Chitra
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Hector, Andrew L.
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Huang, Ruomeng
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Ignatyev, Konstantin
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Levason, William
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Pearce, Stuart
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Thomas, Fiona
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Reid, Gillian
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10 December 2013
Benjamin, Sophie
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Ignatyev, Konstantin
0215f9cf-e5bc-47ab-8d8c-25eb63da5a3a
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Pearce, Stuart
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Thomas, Fiona
d532d213-3eb4-48d2-a395-6d35fdd0cc15
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Benjamin, Sophie, de Groot, C.H., Gurnani, Chitra, Hector, Andrew L., Huang, Ruomeng, Ignatyev, Konstantin, Levason, William, Pearce, Stuart, Thomas, Fiona and Reid, Gillian
(2013)
Area selective growth of titanium diselenide thin films into micropatterned substrates by low-pressure chemical vapor deposition.
Chemistry of Materials, 25 (23), .
(doi:10.1021/cm402422e).
Abstract
The neutral, distorted octahedral complex [TiCl4(SenBu2)2] (1), prepared from the reaction of TiCl4 with the neutral SenBu2 in a 1:2 ratio and characterized by IR and multinuclear (1H, 13C{1H}, 77Se{1H}) NMR spectroscopy and microanalysis, serves as an efficient single-source precursor for low-pressure chemical vapor deposition (LPCVD) of titanium diselenide, TiSe2, films onto SiO2 and TiN substrates. X-ray diffraction patterns on the deposited films are consistent with single-phase, hexagonal 1T-TiSe2 (P3m1), with evidence of some preferred orientation of the crystallites in thicker films. The composition and structural morphology was confirmed by scanning electron microscopy (SEM), energy dispersive X-ray, and Raman spectroscopy. SEM imaging shows hexagonal plate crystallites growing perpendicular to the substrate, but these tend to align parallel to the surface when the quantity of reagent is reduced. The resistivity of the crystalline TiSe2 films is 3.36 ± 0.05 × 10-3 Ω·cm with a carrier density of 1× 1022 cm-3. Very highly selective film growth from the reagent was observed onto photolithographically patterned substrates, with film growth strongly preferred onto the conducting TiN surfaces of SiO2/TiN patterned substrates. TiSe2 is selectively deposited within the smallest 2 µm diameter TiN holes of the patterned TiN/SiO2 substrates. The variation in crystallite size with different diameter holes is determined by microfocus X-ray diffraction and SEM, revealing that the dimensions increase with the hole size, but that the thickness of the crystals stops increasing above ~20 µm hole size, whereas their lengths/widths continue to increase.
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cm402422e
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e-pub ahead of print date: 5 November 2013
Published date: 10 December 2013
Organisations:
Chemistry, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 360467
URI: http://eprints.soton.ac.uk/id/eprint/360467
ISSN: 0897-4756
PURE UUID: 75a68885-d30d-4110-887a-fe7fb1731e51
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Date deposited: 10 Dec 2013 14:19
Last modified: 15 Mar 2024 03:42
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Author:
Sophie Benjamin
Author:
Chitra Gurnani
Author:
Ruomeng Huang
Author:
Konstantin Ignatyev
Author:
Stuart Pearce
Author:
Fiona Thomas
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