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Mid-infrared silicon photonics devices

Mid-infrared silicon photonics devices
Mid-infrared silicon photonics devices
The mid-infrared wavelength region (3-20 µm) offers several application areas. In this paper we present silicon photonics devices designed for 3-4 µm including rib, strip and PhC waveguides, MMIs, ring resonators, and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have the propagation loss as low as ~ 4 dB/cm at 3.8 µm. We also demonstrate MMIs with insertion loss of 0.2 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This, combined with our previous results reported at 3.4 µm, confirms that SOI is a viable platform for the 3-4 µm region.
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Milošević, Milan
b28da945-84a5-4317-8896-6d9ea6a69589
Sorel, M.
935c5870-5661-45b9-bd22-d5ffb6c8bc01
Krauss, T.F.
5fb33106-b36f-4363-820a-c6e3d0210047
Peacock, A.C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Milošević, Milan
b28da945-84a5-4317-8896-6d9ea6a69589
Sorel, M.
935c5870-5661-45b9-bd22-d5ffb6c8bc01
Krauss, T.F.
5fb33106-b36f-4363-820a-c6e3d0210047
Peacock, A.C.
685d924c-ef6b-401b-a0bd-acf1f8e758fc
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139

Mashanovich, G.Z., Nedeljković, M., Milošević, Milan, Sorel, M., Krauss, T.F., Peacock, A.C., Chong, H.M.H. and Reed, G.T. (2012) Mid-infrared silicon photonics devices. Photonics Global Conference, Singapore. 13 - 16 Dec 2012.

Record type: Conference or Workshop Item (Other)

Abstract

The mid-infrared wavelength region (3-20 µm) offers several application areas. In this paper we present silicon photonics devices designed for 3-4 µm including rib, strip and PhC waveguides, MMIs, ring resonators, and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have the propagation loss as low as ~ 4 dB/cm at 3.8 µm. We also demonstrate MMIs with insertion loss of 0.2 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This, combined with our previous results reported at 3.4 µm, confirms that SOI is a viable platform for the 3-4 µm region.

Full text not available from this repository.

More information

e-pub ahead of print date: 2012
Venue - Dates: Photonics Global Conference, Singapore, 2012-12-13 - 2012-12-16
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Photonic Systems Circuits & Sensors

Identifiers

Local EPrints ID: 361200
URI: https://eprints.soton.ac.uk/id/eprint/361200
PURE UUID: 036a59a7-5d62-4bc8-8da9-5767f976d2cf
ORCID for M. Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911
ORCID for A.C. Peacock: ORCID iD orcid.org/0000-0002-1940-7172
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 16 Jan 2014 11:45
Last modified: 06 Oct 2018 00:36

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