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High-accuracy current memory in HV CMOS technology

High-accuracy current memory in HV CMOS technology
High-accuracy current memory in HV CMOS technology
This brief describes an improved current memory
circuit aimed at circumventing problems inherent in using a high-voltage double-diffused MOS (DMOS) with CMOS technology. In addition to dealing with the excessive output conductance of a simple cell with cascoding in the familiar way, the circuit addresses the significant drain–gate feedthrough seen in such technologies.
A replica bias scheme ensures that the gm of the memory device remains substantially constant notwithstanding the signal current level variations, leading to improved control over charge injection errors. The topology may also be used in conventional small geometry CMOS technology
1549-7747
321-325
Bodnar, Rares
37f4be97-985b-401d-bd9a-a4d3caf007e9
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf
Bodnar, Rares
37f4be97-985b-401d-bd9a-a4d3caf007e9
Redman-White, W.
d5376167-c925-460f-8e9c-13bffda8e0bf

Bodnar, Rares and Redman-White, W. (2013) High-accuracy current memory in HV CMOS technology. IEEE Transactions on Circuits and Systems II: Express Briefs, 60 (6), 321-325. (doi:10.1109/TCSII.2013.2258251).

Record type: Article

Abstract

This brief describes an improved current memory
circuit aimed at circumventing problems inherent in using a high-voltage double-diffused MOS (DMOS) with CMOS technology. In addition to dealing with the excessive output conductance of a simple cell with cascoding in the familiar way, the circuit addresses the significant drain–gate feedthrough seen in such technologies.
A replica bias scheme ensures that the gm of the memory device remains substantially constant notwithstanding the signal current level variations, leading to improved control over charge injection errors. The topology may also be used in conventional small geometry CMOS technology

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More information

Published date: June 2013
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 361454
URI: https://eprints.soton.ac.uk/id/eprint/361454
ISSN: 1549-7747
PURE UUID: f985770b-560f-4894-8366-9ed7c5a2cb16

Catalogue record

Date deposited: 23 Jan 2014 14:06
Last modified: 16 Jul 2019 21:13

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