Resistive switching characteristics of indium–tin-oxide thin film devices
Resistive switching characteristics of indium–tin-oxide thin film devices
We demonstrate that indium–tin-oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices’ characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.
ITO active layer, memristor, resistive switching, ReRAM devices
1194-1199
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
May 2014
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, A., Salaoru, I. and Prodromakis, T.
(2014)
Resistive switching characteristics of indium–tin-oxide thin film devices.
Physica Status Solidi (A), 211 (5), .
(doi:10.1002/pssa.201330646).
Abstract
We demonstrate that indium–tin-oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices’ characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.
This record has no associated files available for download.
More information
e-pub ahead of print date: 6 March 2014
Published date: May 2014
Keywords:
ITO active layer, memristor, resistive switching, ReRAM devices
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 362422
URI: http://eprints.soton.ac.uk/id/eprint/362422
ISSN: 1862-6300
PURE UUID: ebb2c711-19e4-49a7-9191-a343d407ccee
Catalogue record
Date deposited: 25 Feb 2014 10:01
Last modified: 14 Mar 2024 16:07
Export record
Altmetrics
Contributors
Author:
A. Khiat
Author:
I. Salaoru
Author:
T. Prodromakis
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics