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Resistive switching characteristics of indium–tin-oxide thin film devices

Resistive switching characteristics of indium–tin-oxide thin film devices
Resistive switching characteristics of indium–tin-oxide thin film devices
We demonstrate that indium–tin-oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices’ characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.
ITO active layer, memristor, resistive switching, ReRAM devices
1862-6300
1194-1199
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Khiat, A., Salaoru, I. and Prodromakis, T. (2014) Resistive switching characteristics of indium–tin-oxide thin film devices. Physica Status Solidi (A), 211 (5), 1194-1199. (doi:10.1002/pssa.201330646).

Record type: Article

Abstract

We demonstrate that indium–tin-oxide (ITO), when used as an active core material in metal–insulator–metal type devices, facilitates resistive switching. We fabricated devices both on silicon as well as quartz wafers, to demonstrate transparent devices. Furthermore, we investigated the influence of active core thickness on the devices’ characteristics, showing that their switching threshold scales with the ITO thickness. Unipolar switching was observed for devices comprising thick ITO films while bipolar switching occurred for both thin and thick ITO films at the absence of high voltage forming steps. Our study demonstrates that ITO holds good potential for resistive memory applications.

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More information

e-pub ahead of print date: 6 March 2014
Published date: May 2014
Keywords: ITO active layer, memristor, resistive switching, ReRAM devices
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 362422
URI: https://eprints.soton.ac.uk/id/eprint/362422
ISSN: 1862-6300
PURE UUID: ebb2c711-19e4-49a7-9191-a343d407ccee

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Date deposited: 25 Feb 2014 10:01
Last modified: 18 Jul 2017 02:52

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Contributors

Author: A. Khiat
Author: I. Salaoru
Author: T. Prodromakis

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