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Origin of stochastic resistive switching in devices with phenomenologically identical initial states

Origin of stochastic resistive switching in devices with phenomenologically identical initial states
Origin of stochastic resistive switching in devices with phenomenologically identical initial states
Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation and rupture within the devices’ active cores but the origin of filaments growth is still controversial. Previous research has already demonstrated that initial filamentary states could significantly affect the devices’ switching dynamics and final resistance distributions. Here we demonstrate the relation between pristine resistive states and distribution of filaments via modeling the switching dynamics by utilizing a current percolation circuit. We show that devices with identical initial resistive states could attain distinct plausible filamentary distributions and correspondingly manifest very dissimilar switching dynamics even when biased with similar stimuli.
Qingjiang, Li
8ada44be-b855-4c4b-9bcf-7b1d80f06188
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Hui, X.
bb46bf5c-a723-416a-932c-b6d9aebb7294
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Qingjiang, Li
8ada44be-b855-4c4b-9bcf-7b1d80f06188
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Hui, X.
bb46bf5c-a723-416a-932c-b6d9aebb7294
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Qingjiang, Li, Khiat, A., Salaoru, I., Hui, X. and Prodromakis, T. (2014) Origin of stochastic resistive switching in devices with phenomenologically identical initial states At IEEE International Symposium on Circuits and Systems (ISCAS), Circuits & Systems Society Forum on Emerging & Selected Topics (CAS-FEST), Australia. 01 - 05 Jun 2014.

Record type: Conference or Workshop Item (Poster)

Abstract

Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation and rupture within the devices’ active cores but the origin of filaments growth is still controversial. Previous research has already demonstrated that initial filamentary states could significantly affect the devices’ switching dynamics and final resistance distributions. Here we demonstrate the relation between pristine resistive states and distribution of filaments via modeling the switching dynamics by utilizing a current percolation circuit. We show that devices with identical initial resistive states could attain distinct plausible filamentary distributions and correspondingly manifest very dissimilar switching dynamics even when biased with similar stimuli.

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More information

Published date: June 2014
Venue - Dates: IEEE International Symposium on Circuits and Systems (ISCAS), Circuits & Systems Society Forum on Emerging & Selected Topics (CAS-FEST), Australia, 2014-06-01 - 2014-06-05
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 362466
URI: http://eprints.soton.ac.uk/id/eprint/362466
PURE UUID: 3ec0c0fb-626e-4898-a850-45863ce2890e

Catalogue record

Date deposited: 25 Feb 2014 11:37
Last modified: 18 Jul 2017 02:51

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Contributors

Author: Li Qingjiang
Author: A. Khiat
Author: I. Salaoru
Author: X. Hui
Author: T. Prodromakis

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