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Pulse-induced resistive and capacitive switching in TiO2 ReRAM

Pulse-induced resistive and capacitive switching in TiO2 ReRAM
Pulse-induced resistive and capacitive switching in TiO2 ReRAM
In this study, we provide the experimental evidence of the coexistence of resistive and capacitive features in nanoscale TiO2 based solid state Resistive Random Access Memory (ReRAM). Biasing the devices with voltage sweeps exhibits non-zero crossing I-V characteristics, serving as a signature of capacitive effects. Here, we show that both resistive and capacitive states can be concurrently set via voltage pulsing.
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Berdan, R.
082f1f5b-eaee-48a6-b728-414fc65f72bd
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Salaoru, I., Khiat, A., Berdan, R. and Prodromakis, T. (2013) Pulse-induced resistive and capacitive switching in TiO2 ReRAM. At 39th International Conference on Micro and Nano Engineering (MNE) 39th International Conference on Micro and Nano Engineering (MNE), United Kingdom. 16 - 19 Sep 2013.

Record type: Conference or Workshop Item (Poster)

Abstract

In this study, we provide the experimental evidence of the coexistence of resistive and capacitive features in nanoscale TiO2 based solid state Resistive Random Access Memory (ReRAM). Biasing the devices with voltage sweeps exhibits non-zero crossing I-V characteristics, serving as a signature of capacitive effects. Here, we show that both resistive and capacitive states can be concurrently set via voltage pulsing.

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More information

e-pub ahead of print date: September 2013
Venue - Dates: 39th International Conference on Micro and Nano Engineering (MNE), United Kingdom, 2013-09-16 - 2013-09-19
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 362607
URI: https://eprints.soton.ac.uk/id/eprint/362607
PURE UUID: 194e92c5-cd0c-4a26-a16f-8f28949c0680

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Date deposited: 27 Feb 2014 13:34
Last modified: 18 Jul 2017 02:50

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Contributors

Author: I. Salaoru
Author: A. Khiat
Author: R. Berdan
Author: T. Prodromakis

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