Multinomial based memristor modelling methodology for simulations and analysis
Multinomial based memristor modelling methodology for simulations and analysis
In this article, we propose a novel memristor modelling methodology with multinomial window function obtained by extensive statistical fitting of the measured data of a practical memristor device. Due to such modelling, the desired electrical characteristics that a fabricated memristor device typically exhibits is accurately described. Moreover, the model features the non-linear state transition behaviour. To demonstrate the effectiveness of the proposed modelling methodology, a Verilog-A-based memristor model has been implemented, leading to further development of a memristor-based complementary resistive switch (CRS). We show that the proposed memristor modelling methodology facilitates accurate device-level characteristics and also advances effective circuits and system simulations using memristors.
1-12
Li, Gong
4c66ffa3-336a-4d94-83e0-79bce54427cd
Mathew, Jimson
156eec1e-d690-43eb-a72f-daefd8b04144
Shafik, Rishad Ahmed
aa0bdafc-b022-4cb2-a8ef-4bf8a03ba524
Pradhan, Dhiraj K.
14f13d30-42ec-43bf-941b-3116a7f803fc
2015
Li, Gong
4c66ffa3-336a-4d94-83e0-79bce54427cd
Mathew, Jimson
156eec1e-d690-43eb-a72f-daefd8b04144
Shafik, Rishad Ahmed
aa0bdafc-b022-4cb2-a8ef-4bf8a03ba524
Pradhan, Dhiraj K.
14f13d30-42ec-43bf-941b-3116a7f803fc
Li, Gong, Mathew, Jimson, Shafik, Rishad Ahmed and Pradhan, Dhiraj K.
(2015)
Multinomial based memristor modelling methodology for simulations and analysis.
International Journal of Electronics Letters, 3 (1), .
(doi:10.1080/21681724.2014.901421).
Abstract
In this article, we propose a novel memristor modelling methodology with multinomial window function obtained by extensive statistical fitting of the measured data of a practical memristor device. Due to such modelling, the desired electrical characteristics that a fabricated memristor device typically exhibits is accurately described. Moreover, the model features the non-linear state transition behaviour. To demonstrate the effectiveness of the proposed modelling methodology, a Verilog-A-based memristor model has been implemented, leading to further development of a memristor-based complementary resistive switch (CRS). We show that the proposed memristor modelling methodology facilitates accurate device-level characteristics and also advances effective circuits and system simulations using memristors.
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More information
Accepted/In Press date: 2 March 2014
e-pub ahead of print date: 2 May 2014
Published date: 2015
Organisations:
Electronic & Software Systems
Identifiers
Local EPrints ID: 362841
URI: http://eprints.soton.ac.uk/id/eprint/362841
ISSN: 2168-1724
PURE UUID: e14e9dc8-7e7c-4ec3-8eb6-c522998ec475
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Date deposited: 12 Mar 2014 13:35
Last modified: 14 Mar 2024 16:14
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Contributors
Author:
Gong Li
Author:
Jimson Mathew
Author:
Rishad Ahmed Shafik
Author:
Dhiraj K. Pradhan
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