The University of Southampton
University of Southampton Institutional Repository

Multinomial based memristor modelling methodology for simulations and analysis

Multinomial based memristor modelling methodology for simulations and analysis
Multinomial based memristor modelling methodology for simulations and analysis
In this article, we propose a novel memristor modelling methodology with multinomial window function obtained by extensive statistical fitting of the measured data of a practical memristor device. Due to such modelling, the desired electrical characteristics that a fabricated memristor device typically exhibits is accurately described. Moreover, the model features the non-linear state transition behaviour. To demonstrate the effectiveness of the proposed modelling methodology, a Verilog-A-based memristor model has been implemented, leading to further development of a memristor-based complementary resistive switch (CRS). We show that the proposed memristor modelling methodology facilitates accurate device-level characteristics and also advances effective circuits and system simulations using memristors.
2168-1724
1-12
Li, Gong
4c66ffa3-336a-4d94-83e0-79bce54427cd
Mathew, Jimson
156eec1e-d690-43eb-a72f-daefd8b04144
Shafik, Rishad Ahmed
aa0bdafc-b022-4cb2-a8ef-4bf8a03ba524
Pradhan, Dhiraj K.
14f13d30-42ec-43bf-941b-3116a7f803fc
Li, Gong
4c66ffa3-336a-4d94-83e0-79bce54427cd
Mathew, Jimson
156eec1e-d690-43eb-a72f-daefd8b04144
Shafik, Rishad Ahmed
aa0bdafc-b022-4cb2-a8ef-4bf8a03ba524
Pradhan, Dhiraj K.
14f13d30-42ec-43bf-941b-3116a7f803fc

Li, Gong, Mathew, Jimson, Shafik, Rishad Ahmed and Pradhan, Dhiraj K. (2015) Multinomial based memristor modelling methodology for simulations and analysis. International Journal of Electronics Letters, 3 (1), 1-12. (doi:10.1080/21681724.2014.901421).

Record type: Article

Abstract

In this article, we propose a novel memristor modelling methodology with multinomial window function obtained by extensive statistical fitting of the measured data of a practical memristor device. Due to such modelling, the desired electrical characteristics that a fabricated memristor device typically exhibits is accurately described. Moreover, the model features the non-linear state transition behaviour. To demonstrate the effectiveness of the proposed modelling methodology, a Verilog-A-based memristor model has been implemented, leading to further development of a memristor-based complementary resistive switch (CRS). We show that the proposed memristor modelling methodology facilitates accurate device-level characteristics and also advances effective circuits and system simulations using memristors.

This record has no associated files available for download.

More information

Accepted/In Press date: 2 March 2014
e-pub ahead of print date: 2 May 2014
Published date: 2015
Organisations: Electronic & Software Systems

Identifiers

Local EPrints ID: 362841
URI: http://eprints.soton.ac.uk/id/eprint/362841
ISSN: 2168-1724
PURE UUID: e14e9dc8-7e7c-4ec3-8eb6-c522998ec475

Catalogue record

Date deposited: 12 Mar 2014 13:35
Last modified: 14 Mar 2024 16:14

Export record

Altmetrics

Contributors

Author: Gong Li
Author: Jimson Mathew
Author: Rishad Ahmed Shafik
Author: Dhiraj K. Pradhan

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×