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Memory impedance in TiO2 based metal-insulator-metal devices

Memory impedance in TiO2 based metal-insulator-metal devices
Memory impedance in TiO2 based metal-insulator-metal devices
Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant
Li, Q.
54e51d2b-808c-42f2-95bb-62b4110df4dd
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf
Li, Q.
54e51d2b-808c-42f2-95bb-62b4110df4dd
Khiat, A.
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Salaoru, I.
e3ef4b52-c1df-4ecc-ad0f-472836857407
Papavassiliou, C.
5faf408a-ca30-47e5-8283-4a65536f91ff
Prodromakis, T.
d58c9c10-9d25-4d22-b155-06c8437acfbf

Li, Q., Khiat, A., Salaoru, I., Papavassiliou, C. and Prodromakis, T. (2014) Memory impedance in TiO2 based metal-insulator-metal devices. Scientific Reports, 4 (4522). (doi:10.1038/srep04522).

Record type: Article

Abstract

Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant

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Published date: 31 March 2014
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 362895
URI: https://eprints.soton.ac.uk/id/eprint/362895
PURE UUID: 4fc7b8be-f99f-4069-9f4f-a3e13e482bae

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Date deposited: 17 Mar 2014 10:00
Last modified: 20 Nov 2017 17:33

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Contributors

Author: Q. Li
Author: A. Khiat
Author: I. Salaoru
Author: C. Papavassiliou
Author: T. Prodromakis

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