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Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor
Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor
High quality, nanostructured Bi2Te3,with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi2Te3 and to develop the nascent field of topological insulators.
Thermoelectric
2050-7488
4865-4869
Benjamin, Sophie L.
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Benjamin, Sophie L.
3efd7555-c2e0-4330-a289-681bd13700df
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037

Benjamin, Sophie L., de Groot, C.H., Gurnani, Chitra, Hector, Andrew L., Huang, Ruomeng, Koukharenko, Elena, Levason, William and Reid, Gillian (2014) Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor. Journal of Materials Chemistry A, 2 (14), 4865-4869. (doi:10.1039/c4ta00341a).

Record type: Article

Abstract

High quality, nanostructured Bi2Te3,with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi2Te3 and to develop the nascent field of topological insulators.
Thermoelectric

Text
Benjamin2014-Controlling the Nanostructure of Bismuth Telluride by Selective Chemical Vapour Deposition from a Single Source Precursor.pdf - Version of Record
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More information

Accepted/In Press date: 12 February 2014
e-pub ahead of print date: 12 February 2014
Published date: 14 April 2014
Organisations: Characterisation and Analytics, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 363119
URI: http://eprints.soton.ac.uk/id/eprint/363119
ISSN: 2050-7488
PURE UUID: e1f32f23-5df1-4a9f-8711-2b20c5b21735
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

Catalogue record

Date deposited: 20 Mar 2014 14:44
Last modified: 31 Jul 2019 00:54

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