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Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios

Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
Amorphous SiC based resistive memory Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. Co-existence of bipolar and unipolar behavior has been observed with ON/OFF current ratio in the range of 108–109. These high ratios are due to the conduction in the OFF state being dominated by the Schottky barrier between the Au and SiC. ON/OFF ratios exceeding 107 over 10 years were predicted from retention characterization. The unique performance combination of the extremely high ON/OFF ratio, coexistence of bipolar and unipolar switching modes as well as excellent stability and retention suggest significant application potentials of Cu/a-SiC/Au RM devices.
0167-9317
61-64
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1

Zhong, Le, Reed, P.A.S., Huang, Ruomeng, de Groot, C.H. and Jiang, Liudi (2014) Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios. Microelectronic Engineering, 119, 61-64. (doi:10.1016/j.mee.2014.02.004).

Record type: Article

Abstract

Amorphous SiC based resistive memory Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. Co-existence of bipolar and unipolar behavior has been observed with ON/OFF current ratio in the range of 108–109. These high ratios are due to the conduction in the OFF state being dominated by the Schottky barrier between the Au and SiC. ON/OFF ratios exceeding 107 over 10 years were predicted from retention characterization. The unique performance combination of the extremely high ON/OFF ratio, coexistence of bipolar and unipolar switching modes as well as excellent stability and retention suggest significant application potentials of Cu/a-SiC/Au RM devices.

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More information

Published date: 14 February 2014
Organisations: Engineering Mats & Surface Engineerg Gp, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 363214
URI: http://eprints.soton.ac.uk/id/eprint/363214
ISSN: 0167-9317
PURE UUID: 431725c7-7380-4311-a772-e564b94b684c
ORCID for P.A.S. Reed: ORCID iD orcid.org/0000-0002-2258-0347
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 21 Mar 2014 11:38
Last modified: 10 Dec 2019 01:56

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Contributors

Author: Le Zhong
Author: P.A.S. Reed ORCID iD
Author: Ruomeng Huang
Author: C.H. de Groot ORCID iD
Author: Liudi Jiang ORCID iD

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