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Optical and electronic properties of bismuth-implanted glasses

Optical and electronic properties of bismuth-implanted glasses
Optical and electronic properties of bismuth-implanted glasses
Photoluminescence (PL) and excitation spectra of Bi melt doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glass, and BaF2 crystal all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.
bismuth, implantation, chalcogenide, photoluminescene
Hughes, M.A.
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Federenko, Y.
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Lee, T.H.
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Yao, J.
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Gholipour, B.
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Gwilliam, R.M.
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Homewood, K.
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Hewak, D.W.
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Elliott, S.R.
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Curry, R.J.
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Hughes, M.A.
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Federenko, Y.
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Lee, T.H.
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Yao, J.
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Gholipour, B.
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Gwilliam, R.M.
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Homewood, K.
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Hewak, D.W.
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Elliott, S.R.
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Curry, R.J.
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Hughes, M.A., Federenko, Y., Lee, T.H., Yao, J., Gholipour, B., Gwilliam, R.M., Homewood, K., Hewak, D.W., Elliott, S.R. and Curry, R.J. (2014) Optical and electronic properties of bismuth-implanted glasses. SPIE Photonics West 2014, San Francisco, United States. 01 - 06 Feb 2014. 7 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

Photoluminescence (PL) and excitation spectra of Bi melt doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glass, and BaF2 crystal all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.

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Published date: February 2014
Venue - Dates: SPIE Photonics West 2014, San Francisco, United States, 2014-02-01 - 2014-02-06
Keywords: bismuth, implantation, chalcogenide, photoluminescene
Organisations: Optoelectronics Research Centre, Electrochemistry

Identifiers

Local EPrints ID: 363250
URI: http://eprints.soton.ac.uk/id/eprint/363250
PURE UUID: 6551c1d5-3245-4e5e-911f-baac9a8adc48
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

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Date deposited: 21 Mar 2014 12:17
Last modified: 20 Jul 2019 01:21

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Contributors

Author: M.A. Hughes
Author: Y. Federenko
Author: T.H. Lee
Author: J. Yao
Author: B. Gholipour
Author: R.M. Gwilliam
Author: K. Homewood
Author: D.W. Hewak ORCID iD
Author: S.R. Elliott
Author: R.J. Curry

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