Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
Resistive memories (RMs) using amorphous SiC (a-SiC) as the solid electrolyte material have been developed with a Cu/a-SiC/Au stack configuration. Excellent non-volatile bipolar switching characteristics have been observed. An extremely high ON/OFF current ratio in the order of 109 has been observed corresponding to distinctive low (LRS) and high (HRS) resistance states, which is potentially beneficial for future RM applications with reliable state detection and simple periphery circuits. The deposited a-SiC has been extensively characterised for its micro/nanostructures, chemical composition as well as electrical properties. The switching mechanism is investigated through detailed analysis of corresponding I–V curves. The results imply a filamentary conduction mechanism at LRS and Schottky emission mechanism at HRS, especially in the subsequent switching cycles. The contrasting conducting material properties and mechanisms at LRS and HRS contribute to the high ON/OFF ratio. Overall, Cu/a-SiC based RMs demonstrate a number of high performance potentials.
98-102
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
April 2014
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le, Reed, P.A.S., Huang, Ruomeng, de Groot, C.H. and Jiang, Liudi
(2014)
Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio.
Solid-State Electronics, 94, .
(doi:10.1016/j.sse.2014.02.013).
Abstract
Resistive memories (RMs) using amorphous SiC (a-SiC) as the solid electrolyte material have been developed with a Cu/a-SiC/Au stack configuration. Excellent non-volatile bipolar switching characteristics have been observed. An extremely high ON/OFF current ratio in the order of 109 has been observed corresponding to distinctive low (LRS) and high (HRS) resistance states, which is potentially beneficial for future RM applications with reliable state detection and simple periphery circuits. The deposited a-SiC has been extensively characterised for its micro/nanostructures, chemical composition as well as electrical properties. The switching mechanism is investigated through detailed analysis of corresponding I–V curves. The results imply a filamentary conduction mechanism at LRS and Schottky emission mechanism at HRS, especially in the subsequent switching cycles. The contrasting conducting material properties and mechanisms at LRS and HRS contribute to the high ON/OFF ratio. Overall, Cu/a-SiC based RMs demonstrate a number of high performance potentials.
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Published date: April 2014
Organisations:
Engineering Mats & Surface Engineerg Gp, Nanoelectronics and Nanotechnology
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Local EPrints ID: 363648
URI: http://eprints.soton.ac.uk/id/eprint/363648
PURE UUID: 47334f5f-5e07-4df5-b7b5-681da71ca9ae
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Date deposited: 28 Mar 2014 11:33
Last modified: 15 Mar 2024 03:42
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Author:
Le Zhong
Author:
Ruomeng Huang
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