The University of Southampton
University of Southampton Institutional Repository

Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio

Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
Resistive memories (RMs) using amorphous SiC (a-SiC) as the solid electrolyte material have been developed with a Cu/a-SiC/Au stack configuration. Excellent non-volatile bipolar switching characteristics have been observed. An extremely high ON/OFF current ratio in the order of 109 has been observed corresponding to distinctive low (LRS) and high (HRS) resistance states, which is potentially beneficial for future RM applications with reliable state detection and simple periphery circuits. The deposited a-SiC has been extensively characterised for its micro/nanostructures, chemical composition as well as electrical properties. The switching mechanism is investigated through detailed analysis of corresponding I–V curves. The results imply a filamentary conduction mechanism at LRS and Schottky emission mechanism at HRS, especially in the subsequent switching cycles. The contrasting conducting material properties and mechanisms at LRS and HRS contribute to the high ON/OFF ratio. Overall, Cu/a-SiC based RMs demonstrate a number of high performance potentials.
98-102
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1

Zhong, Le, Reed, P.A.S., Huang, Ruomeng, de Groot, C.H. and Jiang, Liudi (2014) Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio. Solid-State Electronics, 94, 98-102. (doi:10.1016/j.sse.2014.02.013).

Record type: Article

Abstract

Resistive memories (RMs) using amorphous SiC (a-SiC) as the solid electrolyte material have been developed with a Cu/a-SiC/Au stack configuration. Excellent non-volatile bipolar switching characteristics have been observed. An extremely high ON/OFF current ratio in the order of 109 has been observed corresponding to distinctive low (LRS) and high (HRS) resistance states, which is potentially beneficial for future RM applications with reliable state detection and simple periphery circuits. The deposited a-SiC has been extensively characterised for its micro/nanostructures, chemical composition as well as electrical properties. The switching mechanism is investigated through detailed analysis of corresponding I–V curves. The results imply a filamentary conduction mechanism at LRS and Schottky emission mechanism at HRS, especially in the subsequent switching cycles. The contrasting conducting material properties and mechanisms at LRS and HRS contribute to the high ON/OFF ratio. Overall, Cu/a-SiC based RMs demonstrate a number of high performance potentials.

Full text not available from this repository.

More information

Published date: April 2014
Organisations: Engineering Mats & Surface Engineerg Gp, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 363648
URI: http://eprints.soton.ac.uk/id/eprint/363648
PURE UUID: 47334f5f-5e07-4df5-b7b5-681da71ca9ae
ORCID for P.A.S. Reed: ORCID iD orcid.org/0000-0002-2258-0347
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 28 Mar 2014 11:33
Last modified: 10 Dec 2019 01:56

Export record

Altmetrics

Contributors

Author: Le Zhong
Author: P.A.S. Reed ORCID iD
Author: Ruomeng Huang
Author: C.H. de Groot ORCID iD
Author: Liudi Jiang ORCID iD

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×