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Three mask polysilicon thin film transistor biosensor

Three mask polysilicon thin film transistor biosensor
Three mask polysilicon thin film transistor biosensor
Biosensors are commonly produced using a silicon-on-insulator (SOI) CMOS process and advanced lithography to define nanowires. In this paper, a simpler and cheaper junctionless three-mask process is investigated, which uses thin-film technology to avoid the use of SOI wafers, in situ doping to avoid the need for ion implantation and direct contact to a low-doped polysilicon film to eliminate the requirement for heavily doped source/drain contacts. Furthermore, TiN is used to contact the biosensor source/drain because it is a hard resilient material that allows the biosensor chip to be directly connected to a printed circuit board without wire bonding. pH sensing experiments, combined with device modeling, are used to investigate the effects of contact and series resistance on the biosensor performance, as this is a key issue when contacting directly to low-doped silicon. It is shown that in situ phosphorus doping concentrations in the range 4 × 10(17) – 3 × 10(19) cm(?3) can be achieved using 0.1% PH3 flows between 4 and 20 sccm. Furthermore, TiN makes an ohmic contact to the polysilicon even at the bottom end of this doping range. Operation as a biosensor is demonstrated by the detection of C-reactive protein, an inflammatory biomarker for respiratory disease.
2170-2176
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Lombardini, Marta
c8653079-b66c-49ca-ac59-93c3d17b26a4
Ditshego, N.M. Jack
a6e2b1ec-2a55-40f1-90e0-59bc59f1b26d
Pearce, Stuart J.
ff0073af-0638-4b6f-aa9f-e623a36d3159
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Thomas, Owain
f9816700-63de-4cbf-a4dd-939ff7607fb5
de Planque, Maurits R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Morgan, Hywel
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, Kai
2ace53c1-82cc-47e5-911e-898b143163d3
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Lombardini, Marta
c8653079-b66c-49ca-ac59-93c3d17b26a4
Ditshego, N.M. Jack
a6e2b1ec-2a55-40f1-90e0-59bc59f1b26d
Pearce, Stuart J.
ff0073af-0638-4b6f-aa9f-e623a36d3159
Kiang, Kian Shen
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Thomas, Owain
f9816700-63de-4cbf-a4dd-939ff7607fb5
de Planque, Maurits R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, Harold M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Morgan, Hywel
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, Kai, Zeimpekis, Ioannis, Lombardini, Marta, Ditshego, N.M. Jack, Pearce, Stuart J., Kiang, Kian Shen, Thomas, Owain, de Planque, Maurits R.R., Chong, Harold M.H., Morgan, Hywel and Ashburn, Peter (2014) Three mask polysilicon thin film transistor biosensor. IEEE Transactions on Electron Devices, 61 (6), 2170-2176. (doi:10.1109/TED.2014.231566).

Record type: Article

Abstract

Biosensors are commonly produced using a silicon-on-insulator (SOI) CMOS process and advanced lithography to define nanowires. In this paper, a simpler and cheaper junctionless three-mask process is investigated, which uses thin-film technology to avoid the use of SOI wafers, in situ doping to avoid the need for ion implantation and direct contact to a low-doped polysilicon film to eliminate the requirement for heavily doped source/drain contacts. Furthermore, TiN is used to contact the biosensor source/drain because it is a hard resilient material that allows the biosensor chip to be directly connected to a printed circuit board without wire bonding. pH sensing experiments, combined with device modeling, are used to investigate the effects of contact and series resistance on the biosensor performance, as this is a key issue when contacting directly to low-doped silicon. It is shown that in situ phosphorus doping concentrations in the range 4 × 10(17) – 3 × 10(19) cm(?3) can be achieved using 0.1% PH3 flows between 4 and 20 sccm. Furthermore, TiN makes an ohmic contact to the polysilicon even at the bottom end of this doping range. Operation as a biosensor is demonstrated by the detection of C-reactive protein, an inflammatory biomarker for respiratory disease.

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More information

e-pub ahead of print date: 22 April 2014
Published date: June 2014
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 363790
URI: https://eprints.soton.ac.uk/id/eprint/363790
PURE UUID: 7dbb0004-76c8-462e-a8c1-449f901b9f09
ORCID for Kian Shen Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for Maurits R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for Harold M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761
ORCID for Hywel Morgan: ORCID iD orcid.org/0000-0003-4850-5676

Catalogue record

Date deposited: 03 Apr 2014 12:41
Last modified: 20 Jul 2019 00:59

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