The University of Southampton
University of Southampton Institutional Repository

A floating gate graphene FET complementary inverter with symmetrical transfer characteristics

A floating gate graphene FET complementary inverter with symmetrical transfer characteristics
A floating gate graphene FET complementary inverter with symmetrical transfer characteristics
This paper presents the concept of a bilayer graphene transistor using a floating gate to achieve the necessary threshold potential required for symmetrical transfer characteristics in complementary inverters. Using the charge injected into the floating-gate, the threshold voltage of the channel can be controlled. The control of the channel's electrostatic doping using a floating-gate is exploited to simulate an inverter which shows a symmetrical transfer characteristic centred at an input voltage of Vdd/2
978-1-4673-5760-9
2071-2074
Umoh, Ime J.
de9d75e6-f504-4650-93a3-cdf9368d1ff3
Kazmierski, T.J.
a97d7958-40c3-413f-924d-84545216092a
Umoh, Ime J.
de9d75e6-f504-4650-93a3-cdf9368d1ff3
Kazmierski, T.J.
a97d7958-40c3-413f-924d-84545216092a

Umoh, Ime J. and Kazmierski, T.J. (2013) A floating gate graphene FET complementary inverter with symmetrical transfer characteristics. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China. pp. 2071-2074 . (doi:10.1109/ISCAS.2013.6572281).

Record type: Conference or Workshop Item (Poster)

Abstract

This paper presents the concept of a bilayer graphene transistor using a floating gate to achieve the necessary threshold potential required for symmetrical transfer characteristics in complementary inverters. Using the charge injected into the floating-gate, the threshold voltage of the channel can be controlled. The control of the channel's electrostatic doping using a floating-gate is exploited to simulate an inverter which shows a symmetrical transfer characteristic centred at an input voltage of Vdd/2

This record has no associated files available for download.

More information

Published date: May 2013
Venue - Dates: 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 2013-05-01
Organisations: EEE

Identifiers

Local EPrints ID: 364328
URI: http://eprints.soton.ac.uk/id/eprint/364328
ISBN: 978-1-4673-5760-9
PURE UUID: 65e53db6-dbf8-4eb4-a8d1-d24765cac5be

Catalogue record

Date deposited: 24 Apr 2014 09:17
Last modified: 14 Mar 2024 16:33

Export record

Altmetrics

Contributors

Author: Ime J. Umoh
Author: T.J. Kazmierski

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×