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Precision dicing of optical materials

Precision dicing of optical materials
Precision dicing of optical materials
Ductile regime dicing has been used to machine a variety of optical materials to produce waveguides for lasers, multi-mode interference devices and non-linear devices. However, few papers discuss the properties of the machining, either qualitatively or quantitatively. In this work ductile regime dicing of germanium, Yttrium Aluminum Garnet (YAG), lithium niobate and silicon for photonic applications are reported. Machining parameters are discussed, surface micrographs shown, and surface roughnesses are calculated for each sidewall machined. The sidewall average surface roughnesses (Sa) were measured to be 2.1 nm for germanium, 3.5 nm for YAG, 7.9 nm for lithium niobate and 8.6 nm for silicon.
Carpenter, Lewis
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Holmes, C.
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Cooper, P.A.
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Gates, J.C.
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Smith, P.G.R.
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Carpenter, Lewis
0daa548e-0d42-4b06-b914-45bfbec41759
Holmes, C.
16306bb8-8a46-4fd7-bb19-a146758e5263
Cooper, P.A.
29354b98-c117-4ace-9ca4-1d3ad531485f
Gates, J.C.
b71e31a1-8caa-477e-8556-b64f6cae0dc2
Smith, P.G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6

Carpenter, Lewis, Holmes, C., Cooper, P.A., Gates, J.C. and Smith, P.G.R. (2014) Precision dicing of optical materials. SPIE Photonics West 2014, , San Francisco, United States. 01 - 06 Feb 2014. (doi:10.1117/12.2039754).

Record type: Conference or Workshop Item (Paper)

Abstract

Ductile regime dicing has been used to machine a variety of optical materials to produce waveguides for lasers, multi-mode interference devices and non-linear devices. However, few papers discuss the properties of the machining, either qualitatively or quantitatively. In this work ductile regime dicing of germanium, Yttrium Aluminum Garnet (YAG), lithium niobate and silicon for photonic applications are reported. Machining parameters are discussed, surface micrographs shown, and surface roughnesses are calculated for each sidewall machined. The sidewall average surface roughnesses (Sa) were measured to be 2.1 nm for germanium, 3.5 nm for YAG, 7.9 nm for lithium niobate and 8.6 nm for silicon.

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Published date: 1 February 2014
Venue - Dates: SPIE Photonics West 2014, , San Francisco, United States, 2014-02-01 - 2014-02-06
Organisations: Optoelectronics Research Centre
Learn more about Optoelectronics Research Centre research

Identifiers

Local EPrints ID: 364405
URI: http://eprints.soton.ac.uk/id/eprint/364405
DOI: doi:10.1117/12.2039754
PURE UUID: 25069547-6a6e-4f2e-9938-4f85b7321656
ORCID for C. Holmes: ORCID iD orcid.org/0000-0001-9021-3760
ORCID for J.C. Gates: ORCID iD orcid.org/0000-0001-8671-5987
ORCID for P.G.R. Smith: ORCID iD orcid.org/0000-0003-0319-718X

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Date deposited: 25 Apr 2014 12:54
Last modified: 15 Mar 2024 03:27

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Contributors

Author: Lewis Carpenter
Author: C. Holmes ORCID iD
Author: P.A. Cooper
Author: J.C. Gates ORCID iD
Author: P.G.R. Smith ORCID iD

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