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Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications

Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications
Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications
Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.
amorphous silicon, femtosecond laser crystallization, hydrogen content, conductivity and photoconductivity, absorption, constant photocurrent method
0040-6090
410-413
Emelyanov, Andrey V.
865c7992-f16b-4817-a4e3-ff95b31239b7
Khenkin, Mark V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Kazanskii, Andrey G.
14a5eeab-a889-4cb6-8f66-e22967512252
Forsh, Pavel A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Kashkarov, Pavel K.
14a22d9e-6d96-4386-a5c0-4f43adf76b1f
Gecevičius, Mindaugas
271576ee-dd9d-40b3-ab2f-19686b91dc64
Beresna, Martynas
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, Peter G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Emelyanov, Andrey V.
865c7992-f16b-4817-a4e3-ff95b31239b7
Khenkin, Mark V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Kazanskii, Andrey G.
14a5eeab-a889-4cb6-8f66-e22967512252
Forsh, Pavel A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Kashkarov, Pavel K.
14a22d9e-6d96-4386-a5c0-4f43adf76b1f
Gecevičius, Mindaugas
271576ee-dd9d-40b3-ab2f-19686b91dc64
Beresna, Martynas
a6dc062e-93c6-46a5-aeb3-8de332cdec7b
Kazansky, Peter G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c

Emelyanov, Andrey V., Khenkin, Mark V., Kazanskii, Andrey G., Forsh, Pavel A., Kashkarov, Pavel K., Gecevičius, Mindaugas, Beresna, Martynas and Kazansky, Peter G. (2014) Femtosecond laser induced crystallization of hydrogenated amorphous silicon for photovoltaic applications. Thin Solid Films, 556, 410-413. (doi:10.1016/j.tsf.2013.12.030).

Record type: Article

Abstract

Femtosecond laser assisted crystallization is used to produce nanocrystalline silicon from hydrogenated amorphous silicon. Changes in structural, optical, electrical and photoelectric properties of laser modified amorphous silicon were investigated. Laser treated films were characterized using atomic force microscopy, Raman spectroscopy, constant photocurrent method and current measurements. Crystalline volume fraction as well as conductivity of laser irradiated films increased with the applied laser fluence, while hydrogen concentration in the films was found to decrease with the fluence. Spectral dependences of absorption coefficient, measured by constant photocurrent method, are discussed in terms of hydrogen out-effusion and additional defect state formation in silicon films during the laser treatment.

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More information

Published date: 1 April 2014
Keywords: amorphous silicon, femtosecond laser crystallization, hydrogen content, conductivity and photoconductivity, absorption, constant photocurrent method
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 367084
URI: http://eprints.soton.ac.uk/id/eprint/367084
ISSN: 0040-6090
PURE UUID: 26de0a71-a9f6-4c72-a87f-13f13a412092

Catalogue record

Date deposited: 19 Aug 2014 08:55
Last modified: 28 Feb 2019 17:31

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