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Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire

Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire
Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire
Ge2Sb2Te5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. This approach enables controls over the dimension and location of the nanowires without affecting the electrical properties. Phase change devices based on these nanowires have been used to systematically investigate the contact resistance between GST phase change material and TiN metal electrodes. The specific contact resistance was found to be 7.96 × 10−5 Ω cm2 for crystalline GST and 6.39 × 10−2 Ω cm2 for amorphous GST. The results suggest that contact resistance plays a dominant role in the total resistance of GST memory device in both crystalline and amorphous states.
0268-1242
1-9
Huang, R.
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, K.
2ace53c1-82cc-47e5-911e-898b143163d3
Kiang, K.S.
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Chen, R.
2198083c-19b4-40dd-a28e-5929b80577c5
Wang, Y.
c48bcc7c-4cb4-468c-af4e-d1e601222009
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, R.
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, K.
2ace53c1-82cc-47e5-911e-898b143163d3
Kiang, K.S.
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Chen, R.
2198083c-19b4-40dd-a28e-5929b80577c5
Wang, Y.
c48bcc7c-4cb4-468c-af4e-d1e601222009
Gholipour, B.
c17bd62d-9df6-40e6-bc42-65272d97e559
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c

Huang, R., Sun, K., Kiang, K.S., Chen, R., Wang, Y., Gholipour, B., Hewak, D.W. and de Groot, C.H. (2014) Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire. Semiconductor Science and Technology, 29 (9), 1-9, [95003]. (doi:10.1088/0268-1242/29/9/095003).

Record type: Article

Abstract

Ge2Sb2Te5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. This approach enables controls over the dimension and location of the nanowires without affecting the electrical properties. Phase change devices based on these nanowires have been used to systematically investigate the contact resistance between GST phase change material and TiN metal electrodes. The specific contact resistance was found to be 7.96 × 10−5 Ω cm2 for crystalline GST and 6.39 × 10−2 Ω cm2 for amorphous GST. The results suggest that contact resistance plays a dominant role in the total resistance of GST memory device in both crystalline and amorphous states.

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More information

e-pub ahead of print date: 23 July 2014
Published date: September 2014
Organisations: Optoelectronics Research Centre, Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 367235
URI: http://eprints.soton.ac.uk/id/eprint/367235
ISSN: 0268-1242
PURE UUID: dded4112-f84a-44be-83e8-66c4666a20d0
ORCID for K.S. Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for C.H. de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 24 Jul 2014 14:59
Last modified: 08 Oct 2019 00:54

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